2N4403 / MMBT4403
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BEX
I
CEX
Collector-Emitter Breakdown
Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
I
C
= 1.0 mA, I
B
= 0
I
C
= 0.1 mA, I
E
= 0
I
E
= 0.1 A, I
C
= 0
V
CE
= 35 V, V
EB
= 0.4 V
V
CE
= 35 V, V
BE
= 0.4 V
40
40
5.0
0.1
0.1
V
V
V
µA
µA
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 0.1 mA, V
CE
= 1.0 V
I
C
= 1.0 mA, V
CE
= 1.0 V
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 150 mA, V
CE
= 2.0 V*
I
C
= 500 mA, V
CE
= 2.0 V*
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 150 mA, I
B
= 15 mA*
I
C
= 500 mA, I
B
= 50 mA
30
60
100
100
20
300
0.4
0.75
0.95
1.3
V
V
V
V
V
CE(
sat
)
V
BE(
sat
)
Collector-Emitter Saturation
Voltage*
Base-Emitter Saturation Voltage
0.75
SMALL SIGNAL CHARACTERISTICS
f
T
C
cb
C
eb
h
ie
h
re
h
fe
h
oe
Current Gain - Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Input Impedance
Voltage Feedback Ratio
Small-Signal Current Gain
Output Admittance
I
C
= 20 mA, V
CE
= 10 V,
f = 100 MHz
V
CB
= 10 V, I
E
= 0,
f = 140 kHz
V
BE
= 0.5 V, I
C
= 0,
f = 140 kHz
I
C
= 1.0 mA, V
CE
= 10 V,
f = 1.0 kHz
I
C
= 1.0 mA, V
CE
= 10 V,
f = 1.0 kHz
I
C
= 1.0 mA, V
CE
= 10 V,
f = 1.0 kHz
I
C
= 1.0 mA, V
CE
= 10 V,
f = 1.0 kHz
200
8.5
30
1.5
0.1
60
1.0
15
8.0
500
100
µmhos
MHz
pF
pF
kΩ
x 10
-4
SWITCHING CHARACTERISTICS
t
d
t
r
t
s
t
f
Delay Time
Rise Time
Storage Time
Fall Time
V
CC
= 30 V, I
C
= 150 mA,
I
B1
= 15 mA
V
CC
= 30 V, I
C
= 150 mA
I
B1
= I
B2
= 15 mA
15
20
225
30
ns
ns
ns
ns
*
Pulse Test: Pulse Width
£
300
ms,
Duty Cycle
£
2.0%
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
