2N3906 / MMBT3906 / PZT3906
PNP General Purpose Amplifier
(continued)
Typical Characteristics
V
CESAT
- COLLECTOR EMITTER VOLTAGE (V)
h
F E
- TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain
vs Collector Current
250
V
CE
= 1 .0V
125 °C
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
0.25
0.2
0.15
0.1
125°C
25 °C
β
= 10
200
150
25 °C
100
- 40 °C
0.05
0
- 40 °C
50
0.1
0.2
0.5 1
2
5
10 20
I
C
- COLLECTOR CURRE NT (mA)
50
100
1
10
100
I
C
- COLLECTOR CURRENT (mA)
200
V
BE( ON)
- BASE EMITTER ON VOLTAGE (V)
V
BESAT
- BASE EM ITTE R VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
1
0.8
25 °C
Base Emitter ON Voltage vs
Collector Current
1
0.8
- 40 °C
β
= 10
- 40 °C
0.6
0.4
0.2
0
125 °C
0.6
0.4
0.2
0
0.1
25 °C
125 °C
V
CE
= 1V
1
10
100
I
C
- COLLECTOR CURRE NT (mA)
200
1
10
I
C
- COLLECTOR CURRENT (mA)
25
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLE CTOR CURRENT (nA)
100
V
10
CB
Common-Base Open Circuit
Input and Output Capacitance
vs Reverse Bias Voltage
10
C obo
= 25V
CAPACITANCE (pF)
8
6
4
2
0
0.1
C ibo
1
0.1
0.01
25
50
75
100
T
A
- AMBIE NT TEMP ERATURE (
°
C)
125
1
REVERSE BIAS VOLTAGE (V)
10
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
