1N5817-1N5819
Discrete POWER & Signal
Technologies
1N5817 - 1N5819
Features
•
•
1.0 ampere operation at T
A
= 90°C
with no thermal runaway.
For use in low voltage, high
frequency inverters free
wheeling, and polarity
protection applications.
1.0 min (25.4)
Dimensions in
inches (mm)
0.205 (5.21)
0.160 (4.06)
DO-41
COLOR BAND DENOTES CATHODE
0.107 (2.72)
0.080 (2.03)
0.034 (0.86)
0.028 (0.71)
1.0 Ampere Schottky Barrier Rectifiers
Absolute Maximum Ratings*
Symbol
I
O
i
f(surge)
P
D
R
θJA
T
stg
T
J
T
A
= 25°C unless otherwise noted
Parameter
Average Rectified Current
.375 " lead length @ T
A
= 90°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Storage Temperature Range
Operating Junction Temperature
Value
1.0
Units
A
25
1.25
12.5
80
-65 to +125
-65 to +125
A
W
mW/°C
°C/W
°C
°C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics
Parameter
T
A
= 25°C unless otherwise noted
Device
1N5817
1N5818
30
21
30
0.5
10
550
875
110
1N5819
40
28
40
20
14
20
Units
V
V
V
mA
mA
mV
mV
pF
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
DC Reverse Voltage
(Rated V
R
)
T
A
= 25°C
T
A
= 100°C
@ 1.0 A
@ 3.0 A
Maximum Reverse Current
@ rated V
R
Maximum Forward Voltage
Typical Junction Capacitance
V
R
= 4.0 V, f = 1.0 MHz
450
750
600
900
©1998
Fairchild Semiconductor Corporation
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
