欢迎访问ic37.com |
会员登录 免费注册
发布采购

1N5819.TR 参数 Datasheet PDF下载

1N5819.TR图片预览
型号: 1N5819.TR
PDF下载: 下载PDF文件 查看货源
内容描述: [暂无描述]
分类和应用: 二极管
文件页数/大小: 3 页 / 110 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
 浏览型号1N5819.TR的Datasheet PDF文件第2页浏览型号1N5819.TR的Datasheet PDF文件第3页  
1N5817-1N5819
1N5817 - 1N5819
Features
1.0 ampere operation at T
A
= 90°C
with no thermal runaway.
For use in low voltage, high
frequency inverters free
wheeling, and polarity
protection applications.
DO-41
COLOR BAND DENOTES CATHODE
1.0 Ampere Schottky Barrier Rectifiers
Absolute Maximum Ratings*
Symbol
I
F(AV)
I
FSM
P
D
R
θJA
T
stg
T
J
T
A
= 25°C unless otherwise noted
Parameter
Average Rectified Current
.375 " lead length @ T
A
= 90°C
Non-repetitive Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Storage Temperature Range
Operating Junction Temperature
Value
1.0
25
1.25
12.5
80
-65 to +125
-65 to +125
Units
A
A
W
mW/°C
°C/W
°C
°C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics
Symbol
V
RRM
V
RMS
V
R
I
RM
V
FM
C
T
A
= 25°C unless otherwise noted
Parameter
Maximum Peak Repetitive Reverse Voltage
Maximum RMS Voltage
DC Reverse Voltage
(Rated V
R
)
T
A
= 25°C
@ 1.0 A
450
750
Maximum Instantaneous Reverse Current
T
A
= 100°C
@ rated V
R
Maximum Instantaneous Forward Voltage
@ 3.0 A
Typical Junction Capacitance
V
R
= 4.0 V, f = 1.0 MHz
20
14
20
Device
1N5817 1N5818
30
21
30
0.5
10
550
875
110
1N5819
40
28
40
Units
V
V
V
mA
mA
mV
mV
pF
600
900
2001
Fairchild Semiconductor Corporation
1N5817-1N5819, Rev. A1