1N4154 — High Conductance Fast Diode
July 2009
1N4154
High Conductance Fast Diode
Features
• 500 milliwatt Power Dissipation package.
• Fast Switching Speed.
• Typical capacitance less than 1.0 picofarad.
General Description
The high breakdown voltage, fast switching speed and
high forward conductance of this diode packaged in a
DO-35 miniature Glass Axial leaded package makes it
desirable also as a general purpose diode.
DO-35
Color Band Denotes Cathode
Absolute Maximum Ratings *
T
A
= 25°C unless otherwise noted
Symbol
W
IV
I
O
I
F
i
f
i
F(surge)
Parameter
Working Inverse Voltage
Average Rectified Current
DC Forward Current (I
F
)
Recurrent Peak Forward Current (I
F
)
Peak Forward Surge Current (I
FSM
)
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
Value
35
100
300
400
1.0
4.0
-65 to +200
175
Unit
V
mA
mA
mA
A
A
°C
°C
T
STG
T
J
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
Parameter
Total Power Dissipation at T
A
= 25°
C
Linear Derating Factor from T
A
= 25°
C
Thermal Resistance, Junction to Ambient
Value
500
3.33
300
Unit
mW
mW/°C
°C/W
© 2009 Fairchild Semiconductor Corporation
1N4154 Rev. B0
1
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
