1N/FDLL 914/A/B / 916/A/B / 4148 / 4448
Small Signal Diode
(continued)
Electrical Characteristics
Symbol
V
R
V
F
T
A
= 25°C unless otherwise noted
Parameter
Breakdown Voltage
Forward Voltage
1N914B/4448
1N916B
1N914/916/4148
1N914A/916A
1N916B
1N914B/4448
Test Conditions
I
R
= 100
µA
I
R
= 5.0
µA
I
F
= 5.0 mA
I
F
= 5.0 mA
I
F
= 10 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 100 mA
V
R
= 20 V
V
R
= 20 V, T
A
= 150°C
V
R
= 75 V
V
R
= 0, f = 1.0 MHz
V
R
= 0, f = 1.0 MHz
I
F
= 10 mA, V
R
= 6.0 V (60mA),
I
rr
= 1.0 mA, R
L
= 100Ω
Min
100
75
620
630
Max
Units
V
V
mV
mV
V
V
V
V
nA
µA
µA
pF
pF
ns
I
R
Reverse Current
720
730
1.0
1.0
1.0
1.0
25
50
5.0
2.0
4.0
4.0
C
T
Total Capacitance
1N916A/B/4448
1N914A/B/4148
Reverse Recovery Time
t
rr
Typical Characteristics
160
Ta=25 C
o
120
T a= 25 C
o
Reverse Voltage, V
R
[V]
150
Reverse Current, I
R
[nA]
100
80
140
60
130
40
120
20
110
1
2
3
5
10
20
30
50
100
0
10
R everse V oltage, V
R
[V]
20
30
50
70
100
Reverse Current, I
R
[uA]
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
Figure 1. Reverse Voltage vs Reverse Current
BV - 1.0 to 100 uA
Figure 2. Reverse Current vs Reverse Voltage
IR - 10 to 100 V
550
750
Ta= 25 C
o
Ta= 25 C
o
Forward Voltage, V
R
[mV]
450
Forward Voltage, V [mV]
F
500
700
650
400
600
350
550
300
500
250
450
1
2
3
5
10
20
30
50
100
0.1
0.2
0.3
0.5
1
2
3
5
10
Forward Current, I
F
[uA]
Forward Current, I
F
[m A]
Figure 3. Forward Voltage vs Forward Current
VF - 1 to 100 uA
Figure 4. Forward Voltage vs Forward Current
VF - 0.1 to 10 mA
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
