Small Signal Diode
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max Units
VR
Breakdown Voltage
100
75
V
V
IR = 100 µA
IR = 5.0 µA
VF
Forward Voltage
IF = 5.0 mA
IF = 5.0 mA
IF = 10 mA
IF = 20 mA
IF = 20 mA
IF = 100 mA
VR = 20 V
VR = 20 V, TA = 150°C
620
630
720
730
1.0
1.0
1.0
1.0
25
mV
mV
V
V
V
1N914B/4448
1N916B
1N914/916/4148
1N914A/916A
1N916B
V
1N914B/4448
IR
Reverse Current
nA
µA
µA
50
5.0
V
R = 75 V
CT
trr
Total Capacitance
V
V
R = 0, f = 1.0 MHz
R = 0, f = 1.0 MHz
2.0
4.0
4.0
pF
pF
ns
1N916A/B/4448
1N914A/B/4148
Reverse Recovery Time
IF = 10 mA, VR = 6.0 V (60mA),
Irr = 1.0 mA, RL = 100Ω
Typical Characteristics
160
120
Ta=25 oC
Ta= 25 oC
100
80
60
40
20
0
150
140
130
120
110
10
20
70
100
Reverse V3o0ltage, VR [5V0]
1
2
3
5
10
20
30
50
100
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
Reverse Current, IR [uA]
Figure 2. Reverse Current vs Reverse Voltage
IR - 10 to 100 V
Figure 1. Reverse Voltage vs Reverse Current
BV - 1.0 to 100 uA
550
750
Ta= 25 oC
Ta= 25 oC
500
450
400
350
300
250
700
650
600
550
500
450
1
2
3
5
10
20
30
50
100
0.1
0.2
0.3
0.5
1
2
3
5
10
Forward Current, IF [uA]
Forward Current, IF [mA]
Figure 3. Forward Voltage vs Forward Current
VF - 1 to 100 uA
Figure 4. Forward Voltage vs Forward Current
VF - 0.1 to 10 mA
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
