E S I
E S I
ADVANCED INFORMATION
AC CHARACTERISTICS
Excel Semiconductor inc.
Table 18. Alternate CE# Controlled Erase and Program Operations
Parameter
Description
70
90
Unit
JEDEC
tAVAV
Std.
tWC
tAS
Write Cycle Time( Note 1)
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
70
90
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tAVWL
tELAX
tDVEH
tEHDX
tGHEL
tWLEL
tEHWH
tELEH
tELEL
Address Setup Time
0
tAH
Address Hold Time
45
35
45
45
tDS
Data Setup Time
tDH
Data Hold Time
0
0
0
0
tGHEL
tWS
tWH
tCP
Read Recovery Time Before Write (OE# High to WE# Low)
WE# Setup Time
WE# Hold Time
CE# Pulse Width
30
35
tCPH
CE# Pulse Width High
30
Byte
Programming Operation (Note 2)
Word
Typ
Typ
Typ
6
8
4
tWHWH1
tWHWH1
us
tWHWH1
tWHWH2
tWHWH1
tWHWH2
Accelerated Programming Operation, Word or Byte (Note 2)
Sector Erase Operation (Note 2)
us
Typ
0.7
sec
Notes :
1. Not 100% tested
2. See the “Erase And Programming Performance” section for more information.
48
Rev. 0E May 25, 2006
ES29DL320
EXCELSEMI [ EXCEL SEMICONDUCTOR INC. ]
