E S I
E S I
Excel Semiconductor inc.
AC CHARACTERISTICS
Table 18. Alternate CE# Controlled Erase and Program Operations
Parameter
Description
70R 90
120
Unit
JEDEC
tAVAV
Std.
tWC
tAS
Write Cycle Time( Note 1)
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
70
90
120
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tAVWL
tELAX
tDVEH
tEHDX
tGHEL
tWLEL
tEHWH
tELEH
tELEL
Address Setup Time
0
tAH
Address Hold Time
45
35
45
45
50
50
tDS
Data Setup Time
tDH
Data Hold Time
0
0
0
0
tGHEL
tWS
tWH
tCP
Read Recovery Time Before Write (OE# High to WE# Low)
WE# Setup Time
WE# Hold Time
CE# Pulse Width
CE# Pulse Width High
Byte
35
35
50
tCPH
30
Typ
Typ
Typ
6
8
tWHWH1
tWHWH2
tWHWH1
tWHWH2
Programming Operation (Note 2)
us
Word
Sector Erase Operation (Note 2)
0.7
sec
Notes :
1. Not 100% tested
2. See the “Erase And Programming Performance” section for more information.
43
Rev. 1C Jan 5 , 2006
ES29LV160D
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