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ES29BDS160D-12RTG 参数 Datasheet PDF下载

ES29BDS160D-12RTG图片预览
型号: ES29BDS160D-12RTG
PDF下载: 下载PDF文件 查看货源
内容描述: 32兆( 4M ×8 / 2M ×16 )的CMOS 3.0伏只,引导扇区闪存 [32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory]
分类和应用: 闪存
文件页数/大小: 59 页 / 583 K
品牌: EXCELSEMI [ EXCEL SEMICONDUCTOR INC. ]
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E S I  
E S I  
Excel Semiconductor inc.  
AC CHARACTERISTICS  
Table 18. Alternate CE# Controlled Erase and Program Operations  
Parameter  
Description  
80R 90  
120  
Unit  
JEDEC  
tAVAV  
Std.  
tWC  
tAS  
Write Cycle Time( Note 1)  
Min  
Min  
Min  
Min  
Min  
Min  
Min  
Min  
Min  
Min  
80  
90  
120  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tAVWL  
tELAX  
tDVEH  
tEHDX  
tGHEL  
tWLEL  
tEHWH  
tELEH  
tELEL  
Address Setup Time  
0
tAH  
Address Hold Time  
45  
45  
45  
45  
50  
50  
tDS  
Data Setup Time  
tDH  
Data Hold Time  
0
0
0
0
tGHEL  
tWS  
tWH  
tCP  
Read Recovery Time Before Write (OE# High to WE# Low)  
WE# Setup Time  
WE# Hold Time  
CE# Pulse Width  
CE# Pulse Width High  
Byte  
45  
45  
50  
tCPH  
30  
Typ  
Typ  
Typ  
9
11  
8
tWHWH1  
tWHWH1  
Programming Operation (Note 2)  
us  
Word  
tWHWH1  
tWHWH2  
tWHWH1  
tWHWH2  
Accelerated Programming Operation, Word or Byte (Note 2)  
Sector Erase Operation (Note 2)  
us  
Typ  
0.7  
sec  
Notes :  
1. Not 100% tested  
2. See the “Erase And Programming Performance” section for more information.  
48  
Rev. 2D Jan 5, 2006  
ES29LV320D  
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