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ES29DL640ET-90TGI 参数 Datasheet PDF下载

ES29DL640ET-90TGI图片预览
型号: ES29DL640ET-90TGI
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆( 2M ×8 / 1M ×16 )的CMOS 3.0伏只,引导扇区闪存 [16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory]
分类和应用: 闪存
文件页数/大小: 53 页 / 700 K
品牌: EXCELSEMI [ EXCEL SEMICONDUCTOR INC. ]
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E S I  
E S I  
Excel Semiconductor inc.  
Table 7. Device Geometry Definition  
Addresses  
(Word Mode)  
Addresses  
(Byte Mode)  
Data  
Description  
Device Size = 2N byte  
27h  
4Eh  
0015h  
28h  
29h  
50h  
52h  
0002h  
0000h  
Flash Device Interface description  
02 = x8, x16 Asynchronous  
Max. number of bytes multi-byte write = 2N  
(00h = not supported)  
2Ah  
2Bh  
54h  
56h  
0000h  
0000h  
2Ch  
58h  
0004h  
Number of Erase Block Regions within device  
2Dh  
2Eh  
5Ah  
5Ch  
0000h  
0000h  
Erase Block Region 1 Information  
Number of identical size erase block = 0000h+1 = 1  
2Fh  
30h  
5Eh  
60h  
0040h  
0000h  
Erase Block Region 1 Information  
Block size in Region 1 = 0040h * 256 byte = 16 Kbyte  
31h  
32h  
62h  
64h  
0001h  
0000h  
Erase Block Region 2 Information  
Number of identical size erase block = 0001h+1 =2  
33h  
34h  
66h  
68h  
0020h  
0000h  
Erase Block Region 2 Information  
Block size in Region 2 = 0020h * 256 byte = 8 Kbyte  
35h  
36h  
6Ah  
6Ch  
0000h  
0000h  
Erase Block Region 3 Information  
Number of identical size erase block = 0000h+1 =1  
37h  
38h  
6Eh  
70h  
0080h  
0000h  
Erase Block Region 3 Information  
Block size in Region 3 = 0080h * 256 byte = 32 Kbyte  
39h  
3Ah  
72h  
74h  
001Eh  
0000h  
Erase Block Region 4 Information  
Number of identical size erase block = 001Eh+1 =31  
3Bh  
3Ch  
76h  
78h  
0000h  
0001h  
Erase Block Region 4 Information  
Block size in Region 4 = 0100h * 256 byte = 64 Kbyte  
16  
Rev. 0B January 5 , 2006  
ES29LV160E