E S I
E S I
Excel Semiconductor inc.
This device enters the CFI Query mode when the
system writes the CFI query command, 98h, to
address 55h in word mode (or address AAh in byte
mode), any time the device is ready to read array
data. The system can read CFI information at the
addresses given in Tables 5-8. To terminate reading
CFI data, the system must write the reset com-
mand.The CFI query command can be written to the
system when the device is in the autoselect mode
or the erase-suspend-read mode. The device
enters the CFI query mode, and the system can read
CFI data at the addresses given in Tables 5-8.
When the reset command is written, the device
returns respectively to the read mode or erase-sus-
pend-read mode.
Common Flash Memory
Interface (CFI)
CFI is supported in the ES29LV160 device. The
Common Flash Interface (CFI) specification out-
lines device and host system software interrogation
handshake, which allows specific vendor-specified
software algorithms to be used for entire families of
devices. Software support can then be device-inde-
pendent, JEDEC ID-independent, and forward- and
backward-compatible for the specified flash device
families. Flash vendors can standardize their exist-
ing interfaces for long-term compatibility.
Table 5. CFI Query Identification String
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
Description
10h
11h
12h
20h
22h
24h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
26h
28h
0002h
0000h
Primary OEM Command Set
15h
16h
2Ah
2Ch
0040h
0000h
Address for Primary Extended Table
17h
18h
2Eh
30h
0000h
0000h
Alternate OEM Command Set(00h = none exists)
Address for Alternate OEM Extended Table (00h = none exists)
19h
1Ah
32h
34h
0000h
0000h
Table 6. System Interface String
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
Description
Vcc Min. (write/erase)
D7-D4: volt, D3-D0: 100 millivolt
1Bh
1Ch
36h
38h
0027h
0036h
Vcc Max. (write/erase)
D7-D4: volt, D3-D0: 100 millivolt
1Dh
1Eh
1Fh
3Ah
3Ch
3Eh
0000h
0000h
0004h
Vpp Min. voltage (00h = no Vpp pin present)
Vpp Max. voltage (00h = no Vpp pin present)
Typical timeout per single byte/word write 2N us
Typical timeout for Min. size buffer write 2N us (00h = not supported)
Typical timeout per individual block erase 2N ms
20h
21h
22h
23h
24h
25h
26h
40h
42h
44h
46h
48h
4Ah
4Ch
0000h
000Ah
0000h
0005h
0000h
0004h
0000h
Typical timeout for full chip erase 2N ms (00h = not supported)
Max. timeout for byte/word write 2N times typical
Max. timeout for buffer write 2N times typical
Max. timeout per individual block erase 2N times typical
Max. timeout for full chip erase 2N times typical (00h = not supported)
15
Rev. 0B January 5 , 2006
ES29LV160E
EXCELSEMI [ EXCEL SEMICONDUCTOR INC. ]
