RFMA1214-1W-Q7
UPDATED: 04/24/2008
12.50 – 14.50 GHz High-Gain Surface Mounted PA
FEATURES
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12.50 – 14.50GHz Operating Frequency Range
29dBm Output Power @1dB Compression
30dB Typical Power Gain @1dB Compression
-41dBc OIMD3 @Pout = 19dBm/tone
7X7mm QFN Package
Point-to-point and point-to-multipoint radio
Military Radar Systems
APPLICATIONS
ELECTRICAL CHARACTERISTICS (T
B
=25
°C)
SYMBOL
F
P
1dB
G
1dB
OIMD3
Input RL
Output RL
I
D1
I
D2
V
D1
, V
D2
V
G1
, V
G2
Rth
Tb
PARAMETER/TEST CONDITIONS
Operating Frequency Range
Output Power @1dB Gain Compression
Gain @1dB Gain Compression
Output 3
rd
Order Intermodulation Distortion
@∆f=10MHz, Pout = 19dBm/tone
Input Return Loss
Output Return Loss
Drain Current
1
Drain Current
1
Drain Voltage
Gate Voltage
Thermal Resistance
2
Operating Base Plate Temperature
-30
-2.5
9
+80
MIN
12.5
28.0
27.0
29.0
30.0
-41
-10
-15
180
800
7
220
1000
8
-0.3
o
TYP
MAX
14.5
UNITS
GHz
dBm
dB
-38
dBc
dB
dB
mA
mA
V
V
C/W
o
C
1. Recommended to bias each amplifier stage separately using a gate voltage range, starting from -2.5 to -0.3V to achieve typical current levels.
2. Measured result when used with Excelics recommended evaluation board.
MAXIMUM RATINGS AT 25°C
3,4
SYMBOL
V
D1
, V
D2
V
G1
, V
G2
I
D1
, I
D2
P
IN
T
CH
T
STG
P
T
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
12V
-5V
Idss
20dBm
175°C
-65/175°C
15.0W
CONTINOUS
8V
-2.5 V
220, 1100mA
@ 3dB compression
150°C
-65/150°C
12.6W
3. Operation beyond
absolute
or
continuous
ratings may result in permanent damage or reduction of MTTF respectively.
4. Bias conditions must also satisfy the following equation V
DS
*I
DS
< (T
CH
–T
B
)/R
TH
; where T
B
= Temperature of Base Plate
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 4
Revised May 2008
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
