Excelics
DATA SHEET
•
•
•
•
•
EPA720A
High Efficiency Heterojunction Power FET
•
+37.5dBm TYPICAL OUTPUT POWER
19.0dB TYPICAL POWER GAIN AT 2GHz
0.4 X 7200 MICRON RECESSED
“MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL
HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
Idss SORTED IN 180mA PER BIN RANGE
'
'
'
6
*
6
*
6
*
6
ELECTRICAL CHARACTERISTICS (T
a
= 25 C)
SYMBOLS
P
1dB
G
1dB
PAE
Idss
Gm
Vp
BVgd
BVgs
Rth
PARAMETERS/TEST CONDITIONS
O
Chip Thickness: 50
±
10 microns
(with > 20 microns Gold Plated Heat Sink (PHS) )
All Dimensions In Microns
MIN
36.0
17.5
TYP
37.5
37.5
19.0
14.0
52
MAX
UNIT
dBm
dB
%
Output Power at 1dB Compression
f= 2GHz
Vds=8V, Ids=50% Idss
f= 4GHz
Gain at 1dB Compression
f= 2GHz
Vds=8V, Ids=50% Idss
f= 4GHz
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f=2GHz
Saturated Drain Current
Transconductance
Pinch-off Voltage
Vds=3V, Vgs=0V
Vds=3V, Vgs=0V
Vds=3V, Ids=22mA
1320
1440
2160
2280
-1.0
2820
mA
mS
-2.5
V
V
V
o
Drain Breakdown Voltage Igd=7.2mA
Source Breakdown Voltage Igs=7.2mA
Thermal Resistance (Au-Sn Eutectic Attach)
-11
-7
-15
-14
6
C/W
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Drain-Source Voltage
12V
8V
Vds
Gate-Source Voltage
-8V
-3V
Vgs
Drain Current
Idss
1.6A
Ids
Forward Gate Current
360mA
60mA
Igsf
Input Power
35dBm
@ 3dB Compression
Pin
Channel Temperature
175
o
C
150
o
C
Tch
Storage Temperature
-65/175
o
C
-65/150
o
C
Tstg
Total Power Dissipation
23 W
19 W
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
