欢迎访问ic37.com |
会员登录 免费注册
发布采购

EPA480B 参数 Datasheet PDF下载

EPA480B图片预览
型号: EPA480B
PDF下载: 下载PDF文件 查看货源
内容描述: 高效异质结功率FET [High Efficiency Heterojunction Power FET]
分类和应用:
文件页数/大小: 2 页 / 52 K
品牌: EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
 浏览型号EPA480B的Datasheet PDF文件第2页  
EPA480B/EPA480BV
UPDATED: 09/27/2007
High Efficiency Heterojunction Power FET
+35.5dBm TYPICAL OUTPUT POWER
7.5dB TYPICAL POWER GAIN FOR EPA480B AND
9.0dB FOR EPA480BV AT 12GHz
0.3X 4800 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
EPA480BV WITH VIA HOLE SOURCE GROUNDING
Idss SORTED IN 120mA PER BIN RANGE
Chip Thickness: 45
±
13 microns
All Dimensions In Microns
No Via Hole For EPA480B
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
P
1dB
G
1dB
PAE
Idss
Gm
Vp
BVgd
BVgs
Rth
PARAMETERS/TEST CONDITIONS
MIN
Output Power at 1dB Compression
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
Saturated Drain Current
Transconductance
Pinch-off Voltage
f=12GHz
f=18GHz
f=12GHz
34.0
6.0
EPA480B
TYP
35.5
7.5
EPA480BV
MIN
34.0
7.5
UNIT
MAX
TYP
35.5
35.5
9.0
MAX
dBm
dB
%
1880
mA
mS
-2.5
V
V
V
o
f=12GHz
880
960
40
1440
1520
-1.0
-13
-7
-15
-14
10
-2.5
-13
-7
1880
880
960
45
1440
1520
-1.0
-15
-14
8
Vds=3V, Vgs=0V
Vds=3V, Vgs=0V
Vds=3V, Ids=14mA
Igd=4.8mA
Igs=4.8mA
Drain Breakdown Voltage
Source Breakdown Voltage
Thermal Resistance (Au-Sn Eutectic Attach)
C/W
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
Vds
Vgs
Ids
Igsf
Pin
Tch
stg
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
EPA480B
ABSOLUTE
1
12V
-8V
Idss
240mA
33dBm
175 C
-65/175 C
o
o
EPA480BV
ABSOLUTE
1
12V
-8V
Idss
240mA
33dBm
175 C
-65/175 C
17W
o
o
CONTINUOUS
2
8V
-3V
1.4A
40mA
@ 3dB Compression
150 C
-65/150 C
o
o
CONTINUOUS
2
8V
-3V
1.75A
40mA
@ 3dB Compression
150 C
-65/150 C
14W
o
o
Pt
Total Power Dissipation
14W
11W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Page 1 of 2
September 2007