EPA240D-100P
UPDATED 11/14/2005
High Efficiency Heterojunction Power FET
•
•
•
•
•
•
NON-HERMETIC 100MIL METAL FLANGE PACKAGE
+33 dBm TYPICAL OUTPUT POWER
20 dB TYPICAL POWER GAIN AT 2GHz
0.4 X 2400 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
G
D
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
P
1dB
G
1dB
PAE
Idss
Gm
Vp
BVgd
BVgs
Rth
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
f= 2GHz
Vds=8V, Ids=50% Idss
f= 4GHz
Gain at 1dB Compression
f= 2GHz
Vds=8V, Ids=50% Idss
f= 4GHz
Power Added Efficiency at 1dB Compression
Vds=8 V, Ids=50% Idss
f=2GHz
Saturated Drain Current
Transconductance
Pinch-off Voltage
Drain Breakdown Voltage
Source Breakdown Voltage
Vds=3V, Vgs=0V
Vds=3V, Vgs=0V
Vds=3V, Ids=6mA
Igd=2.4mA
Igs=2.4mA
-11
-7
MIN
31.0
18.5
TYP
33.0
33.0
20.0
14.5
55
440
480
720
760
-1.0
-15
-14
26*
-2.5
940
MAX
UNIT
dBm
dB
%
mA
mS
V
V
V
ºC/W
Thermal Resistance (Au-Sn Eutectic Attach)
* Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM
RATING
1,2
SYMBOLS
PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
8V
-3V
620mA
20mA
@ 3dB Compression
150
o
C
-65 to +150
o
C
5.0W
Drain-Source Voltage
12V
Vds
Gate-Source Voltage
-8V
Vgs
Drain Current
Idss
Ids
Forward Gate Current
120mA
Igsf
Input Power
30 dBm
Pin
Channel Temperature
175
o
C
Tch
Storage Temperature
-65 to +175
o
C
Tstg
Total Power Dissipation
6.0W
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 1
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised November 2005
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
