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EPA120BV 参数 Datasheet PDF下载

EPA120BV图片预览
型号: EPA120BV
PDF下载: 下载PDF文件 查看货源
内容描述: 高效异质结功率FET [High Efficiency Heterojunction Power FET]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 38 K
品牌: EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
 浏览型号EPA120BV的Datasheet PDF文件第2页  
Excelics
EPA120B/EPA120BV
DATA SHEET
High Efficiency Heterojunction Power FET
550
+29.5dBm TYPICAL OUTPUT POWER
9.0dB TYPICAL POWER GAIN FOR EPA120B AND
10.5dB FOR EPA120BV AT 18GHz
0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
EPA120BV WITH VIA HOLE SOURCE GROUNDING
Idss SORTED IN 30mA PER BIN RANGE
50
156
D
D
48
350
100
40
G
G
Chip Thickness: 75
±
20 microns
All Dimensions In Microns
95
50
120
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN
P
1dB
G
1dB
PAE
Idss
Gm
Vp
BVgd
BVgs
Rth
Output Power at 1dB Compression
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
Saturated Drain Current
Transconductance
Pinch-off Voltage
f=12GHz
f=18GHz
f=12GHz
f=18GHz
f=12GHz
220
240
28.0
10.0
TYP
29.5
29.5
11.5
9.0
45
360
380
-1.0
-11
-7
-15
-14
40
:
Via Hole
No Via Hole For EPA120B
EPA120BV
MAX
MIN
28.0
11.5
TYP
29.5
29.5
13.0
10.5
46
500
220
240
-2.5
-11
-7
360
380
-1.0
-15
-14
30
o
EPA120B
UNIT
MAX
dBm
dB
%
500
mA
mS
-2.5
V
V
V
C/W
Vds=3V, Vgs=0V
Vds=3V, Vgs=0V
Vds=3V, Ids=3.0mA
Drain Breakdown Voltage Igd=1.2mA
Source Breakdown Voltage Igs=1.2mA
Thermal Resistance (Au-Sn Eutectic Attach)
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
EPA120B
ABSOLUTE
1
EPA120BV
2
CONTINUOUS
8V
-3V
355mA
10mA
@ 3dB
Compression
150
o
C
-65/150
o
C
2.8W
ABSOLUTE
1
12V
-8V
Idss
60mA
27dBm
175
o
C
-65/175
o
C
4.5W
CONTINUOUS
2
8V
-3V
470mA
10mA
@ 3dB
Compression
150
o
C
-65/150
o
C
3.8W
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
12V
-8V
Idss
60mA
27dBm
175
o
C
-65/175
o
C
3.4W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com