Excelics
DATA SHEET
•
•
•
•
•
+39.5dBm TYPICAL OUTPUT POWER
18.0dB TYPICAL POWER GAIN AT 2GHz
0.4 X 12,000 MICRON RECESSED
“MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL
HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
Idss SORTED IN 300mA PER BIN RANGE
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'
EPA1200A
High Efficiency Heterojunction Power FET
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'
'
6
*
6
*
6
*
6
*
6
*
6
•
ELECTRICAL CHARACTERISTICS (T
a
= 25 C)
SYMBOLS
P
1dB
G
1dB
PAE
Idss
Gm
Vp
BVgd
BVgs
Rth
PARAMETERS/TEST CONDITIONS
O
Chip Thickness: 50
±
10 microns
(with > 20 microns Gold Plated Heat Sink (PHS) )
All Dimensions In Microns
MIN
38.0
16.5
TYP
39.5
39.5
18.0
13.0
43
MAX
UNIT
dBm
dB
%
Output Power at 1dB Compression
f= 2GHz
Vds=8V, Ids=50% Idss
f= 4GHz
Gain at 1dB Compression
f= 2GHz
Vds=8V, Ids=50% Idss
f= 4GHz
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f=2GHz
Saturated Drain Current
Transconductance
Pinch-off Voltage
Vds=3V, Vgs=0V
Vds=3V, Vgs=0V
Vds=3V, Ids=36mA
2200
2400
3600
3800
-1.0
4700
mA
mS
-2.5
V
V
V
o
Drain Breakdown Voltage Igd=12mA
Source Breakdown Voltage Igs=12mA
Thermal Resistance (Au-Sn Eutectic Attach)
-11
-7
-15
-14
4
C/W
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Drain-Source Voltage
12V
8V
Vds
Gate-Source Voltage
-8V
-3V
Vgs
Drain Current
Idss
3.5A
Ids
Forward Gate Current
600mA
100mA
Igsf
Input Power
37dBm
@ 3dB Compression
Pin
Channel Temperature
175
o
C
150
o
C
Tch
Storage Temperature
-65/175
o
C
-65/150
o
C
Tstg
Total Power Dissipation
34 W
28 W
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
