EPA040A-70
UPDATED 11/22/2004
High Efficiency Heterojunction Power FET
FEATURES
•
•
•
•
•
•
NON-HERMETIC LOW COST CERAMIC 70MIL PACKAGE
+25.5 dBm OUTPUT POWER AT 1dB COMPRESSION
7.0 dB POWER GAIN AT 12GHz
0.3 x 800 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION PROFILE
PROVICES EXTRA HIGH POWER EFFICIENCY AND
HIGH RELIABILITY
Caution! ESD sensitive device.
MIN
21.5
9.0
TYP
23.5
23.5
10.5
7.0
45
70
80
-9
-6
120
130
-1.0
-15
-14
250*
o
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
PAE
I
DSS
G
M
V
P
BV
GD
BV
GS
R
TH
PARAMETERS/TEST CONDITIONS
1
Output Power at 1dB Compression
V
DS
= 6V, I
DS
≈
50% I
DSS
Gain at 1dB Compression
V
DS
= 6V, I
DS
≈
50% I
DSS
f = 12GHz
f = 18GHz
f = 12GHz
f = 18GHz
MAX
UNITS
dBm
dB
%
Power Added Efficiency at 1dB Compression
V
DS
= 6V, I
DS
≈
50% I
DSS
f = 12GHz
Saturated Drain Current
Transconductance
Pinch-off Voltage
Drain Breakdown Voltage
Source Breakdown Voltage
Thermal Resistance
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 1.0 mA
I
GD
= 1.0mA
I
GS
= 1.0mA
160
-2.5
mA
mS
V
V
V
C/W
Notes:
*
Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25
O
C
SYMBOL
V
DS
V
GS
I
DS
I
GSF
P
IN
P
T
T
CH
T
STG
PARAMETERS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Forward Gate Current
Input Power
Total Power Dissipation
Channel Temperature
Storage Temperature
ABSOLUTE
10 V
-6 V
Idss
20 mA
20 dBm
550mW
175°C
-65/+175°C
1
CONTINUOURS
6V
-3 V
75 mA
3 mA
2
@ 3dB compression
455mW
150°C
-65/+150°C
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised November 2004
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
