EPA030C/EPA030CV
UPDATED 10/24/2006
High Efficiency Heterojunction Power FET
FEATURES
•
•
•
•
•
•
•
+23dBm TYPICAL OUTPUT POWER
11dB TYPICAL POWER GAIN FOR EPA030C
AND 12.0dB FOR EPA030CV AT 18GHz
0.3 X 300 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION AND PLATED HEAT SINK
ADVANCED EPITAXIAL DOPING PROFILE PROVIDES
HIGH POWER EFFICIENCY AND RELIABILITY
EPA030CV WITH VIA HOLE SOURCE GROUNDING
Idss SORTED IN 10mA PER BIN RANGE
Chip Thickness: 75
±
13 microns (EPA030C)
Chip Thickness: 85
±
15 microns (EPA030CV)
:
Via Hole
No Via Hole For EPA030C
ALL DIMENSIONS IN MICRONS
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOLS
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
V
DS
= 8V, I
DS
≈
50% I
DSS
f = 12GHz
f = 18GHz
Caution! ESD sensitive device
.
EPA030C
MIN
TYP
MAX
21.0
23.0
23.0
12.0
13.5
11.0
45
50
60
-13
-7
90
95
-1.0
-15
-14
125
-2.5
-13
-7
130
50
60
EPA030CV
MIN
21.0
12.5
TYP
23.0
23.0
14.0
12.0
46
90
95
-1.0
-15
-14
95
o
UNIT
MAX
dBm
dB
%
130
mA
mS
-2.5
V
V
V
C/W
P
1dB
G
1dB
PAE
I
DSS
G
M
V
P
BV
GD
BV
GS
R
th
Gain at 1dB Compression
f = 12GHz
f = 18GHz
V
DS
= 8V, I
DS
≈
50% I
DSS
Power Added Efficiency at 1dB Compression
f = 12GHz
V
DS
= 8V, I
DS
≈
50% I
DSS
Saturated Drain Current
Transconductance
Pinch-off Voltage
Drain Breakdown Voltage
Source Breakdown Voltage
V
DS
= 3V, V
GS
= 0V
V
DS
= 3V, V
GS
= 0V
V
DS
= 3 V, I
DS
= 1.0 mA
I
GD
= 1.0mA
I
GS
= 1.0mA
Thermal Resistance(Au-Sn Eutectic Attach)
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
ABSOLUTE
EPA030C
1
EPA030CV
ABSOLUTE
1
10V
-5V
1.4mA
-0.2mA
20dBm
175 C
-65/175 C
1.5W
o
o
CONTINUOUS
2
8V
-3V
0.5mA
-0.1mA
@ 3dB Compression
175 C
-65/175 C
1.1W
o
o
CONTINUOUS
2
8V
-3V
0.5mA
-0.1mA
@ 3dB Compression
175 C
-65/175 C
1.5W
o
o
V
DS
V
GS
Igf
Igr
Pin
Tch
Tstg
Pt
Note:
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reverse Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
10V
-5V
1.4mA
-0.2mA
20dBm
175 C
-65/175 C
1.1W
o
o
1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 2
Revised October 2006
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
