Excelics
DATA SHEET
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•
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•
•
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+22.5dBm TYPICAL OUTPUT POWER
11.0dB TYPICAL POWER GAIN AT 18 GHz
TYPICAL 0.85dB NOISE FIGURE AND 11.0dB ASSOCIATED
GAIN AT 12GHz
0.3 X 250 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
Idss SORTED IN 5 mA PER BIN RANGE
'
6
EPA025A
High Efficiency Heterojunction Power FET
'
*
*
6
Chip Thickness: 75
±
13 microns
All Dimensions In Microns
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
P
1dB
G
1dB
PAE
NF
Ga
Idss
Gm
Vp
BVgd
BVgs
Rth
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
Noise Figure
Vds=2V, Ids=15mA
Associated Gain
Vds=2V, Ids=15mA
Saturated Drain Current
Transconductance
Pinch-off Voltage
Vds=3V, Vgs=0V
Vds=3V, Vgs=0V
Vds=3V, Ids=1.0mA
-11
-7
f=12GHz
f=18GHz
f=12GHz
f=18GHz
f=12GHz
f=12GHz
f=12GHz
40
50
MIN
21.0
12.0
TYP
22.5
22.5
13.5
11.0
47
0.85
11.0
75
80
-1.0
-15
-14
155
o
MAX
UNIT
dBm
dB
%
dB
dB
105
mA
mS
-2.5
V
V
V
C/W
Drain Breakdown Voltage Igd=1.0mA
Source Breakdown Voltage Igs=1.0mA
Thermal Resistance (Au-Sn Eutectic Attach)
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
ABSOLUTE
1
12V
-8V
Idss
12mA
19dBm
175 C
-65/175
o
C
o
CONTINUOUS
2
8V
-3V
90mA
2mA
@3dB Compression
150
o
C
-65/150
o
C
Total Power Dissipation
880mW
730mW
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
