EMP201
17.5 – 21.0 GHz Power Ammplifier MMIC
Issued Date: 12-18-03
FEATURES
•
•
•
17.5 – 21.0 GHz Bandwidth
24.5dBm Output Power at 1dB Compression
18.0 dB Typical Power Gain
APPLICATIONS
•
•
Point-to-point and point-to-multipoint radio
Military Radar Systems
Dimension: 2250um X 1000um
ELECTRICAL CHARACTERISTICS (T
a
= 25
°C)
SYMBOL
F
P
1dB
Gss
IP3
Input RL
Output RL
Idd
Vdd
Rth
PARAMETER/TEST CONDITIONS
Operating Frequency Range
Output Power at 1dB Compression
V
DS
= 8 V, I
DSQ
≈
1/2 I
DSS
Small Signal Gain
Third Order Interception Point
Input Return Loss
Output Return Loss
Power Supply Current
Power Supply Voltage
Thermal Resistance (Au-Sn Eutectic Attach)
8
6
MIN
17.5
23.5
16
24.5
18
31
10
8
150
7
50
210
8
o
TYP
MAX
21.0
UNITS
GHz
dBm
dB
dBm
dB
dB
mA
V
C/W
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION
1,2
SYMBOL
V
DS
V
GS
I
DD
I
GSF
P
IN
T
CH
T
STG
P
T
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
VALUE
8V
-3 V
300mA
8mA
@ 3dB compression
150°C
-65/150°C
3.4W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation V
DS
*I
DS
< (T
CH
–T
HS
)/R
TH
;
where T
HS
= ambient temperature
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
