EMP110
UPDATED 12/15/2004
5.9 – 7.9 GHz Power Amplifier MMIC
FEATURES
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5.9 – 7.9 GHz Operating Frequency Range
27.0dBm Output Power at 1dB Compression
19.0 dB Typical Small Signal Gain
-41dBc OIMD3 @Each Tone Pout 17 dBm
Point-to-point and point-to-multipoint radio
Military Radar Systems
Dimension: 1130um X 2250um
Thickness: 85um + 15um
APPLICATIONS
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS
(
Tb = 25
°C,
50 ohm, Vds = 7 V, Idsq = 400 mA, Unless Otherwise Specified
)
SYMBOL
F
P1dB
Gss
OIMD3
Input RL
Output RL
Idss
Vds
NF
Rth
Tb
SYMBOL
Vds
V
GS
Ids
I
GSF
P
IN
T
CH
T
STG
P
T
PARAMETER/TEST CONDITIONS
Operating Frequency Range
Output Power at 1dB Gain Compression
Small Signal Gain
Output 3
rd
Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 17dBm,
7V, 60%+10%Idss
Input Return Loss
Output Return Loss
Saturated Drain Current
Drain to Source Voltage
Noise Figure @7GHz
Thermal Resistance (Au-Sn Eutectic Attach)
Operating Base Plate Temperature
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
12V
-8V
Idss
57mA
24dBm
175°C
-65/175°C
6.2W
- 35
CONTINUOUS
8V
-4V
650mA
9.5 mA
@ 3dB compression
150°C
-65/150°C
5.2W
Vds =3V, V
GS
=0V
490
MIN
5.9
26.0
16.0
27.0
19.0
-41
-12
-6
570
7
7
22
+ 85
o
TYP
MAX
7.9
UNITS
GHz
dBm
dB
-38
-8
dBc
dB
dB
660
8
mA
V
dB
C/W
ºC
MAXIMUM RATINGS AT 25°C
1,2
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation Vds*Ids < (T
CH
–Tb)/R
TH
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 3
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised December 2004
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
