Excelics
TENTATIVE DATA SHEET
EMA406C
26 - 32 GHz Low Noise MMIC
FEATURES
•
•
•
•
•
•
•
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26 -32 GHz BANDWIDTH
+20.0 dBm TYPICAL OUTPUT POWER
21 dB
±
1.5 dB TYPICAL POWER GAIN
FOUR SECTION, DISTRIBUTED AMPLIFIER
DUAL BIAS SUPPLY
0.3 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
Chip Size 1060 x 2500 microns
Chip Thickness: 75
±
13 microns
All Dimensions In Microns
ELECTRICAL CHARACTERISTICS
1
(T
a
= 25
O
C)
SYMBOL
F
P
1dB
Gss
∆
Gss
NF
VSWR in
VSWR out
Idd
Vdd
PARAMETERS/TEST CONDITIONS
Operating Frequency Range
Ouput Power at 1dB Gain Compression
Small Signal Gain
Small Signal Gain Flatness
Noise Figure
Input VSWR
Output VSWR
Power Supply Current
Power Supply Voltage
MIN
26
TYP
MAX
32
UNIT
GHz
dBm
dB
dB
dB
20
21
±
1.5
6
2.0:1
3.0:1
140
5
8
mA
V
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Drain-Source Voltage
12V
8V
Vds
Gate-Source Voltage
-8V
-3V
Vgs
Drain Current
Idss
215mA
Ids
Forward Gate Current
50 mA
8.5mA
Igf
Input Power
15dBm
@3dB Compression
Pin
o
Channel Temperature
175 C
150
o
C
Tch
Storage Temperature
-65/175
o
C
-65/150
o
C
Tstg
Total Power Dissipation
1W
0.85 W
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
