EMA112-CP083
ISSUED 11/27/2006
0.5 – 3.0 GHz High Linearity Power MMIC
Features
•
•
•
•
0.5 – 3.0 Ghz Bandwidth
28.0dBm Typical Output Power at 1dB
Compression
15.0 dB Typical Small Signal Gain
Single Bias Supply
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T
b
= 25°C)
SYMBOL
F
P
1dB
G
SS
OIMD3
NF
RL
IN
RL
OUT
I
DD
R
TH
PARAMETERS/TEST CONDITIONS
1
Operating Frequency Range
Power at 1dB Compression V
DD
= 8.0V, F=2.4G
Small Signal Gain
V
DD
= 8.0V, F=2.4G
Output 3
rd
Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 18dBm
V
DD
= 8.0V, F=2.4G
Noise Figure
Input Return Loss
Output Return Loss
Power Supply Current
Thermal Resistance
1
V
DD
= 8.0V, F=2.4G
V
DD
= 8.0V, F=2.4G
V
DD
= 8.0V, F=2.4G
8
8
170
MIN
0.5
27.0
13.0
28.0
15.0
-46
2.7
10
10
210
35
250
o
TYP
MAX
3
UNITS
GHz
dBm
dB
-43
3.2
dBc
dB
dB
dB
mA
C/W
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION
1,2
SYMBOL
V
DD
V
GG
I
DD
I
GSF
P
IN
P
T
T
CH
T
STG
Gate Voltage
Drain Current
Forward Gate Current
Input Power
Total Power Dissipation
Channel Temperature
Storage Temperature
CHARACTERISTIC
Power Supply Voltage
VALUE
8V
-3 V
IDSS
10 mA
@ 3dB compression
3.5 W
150°C
-65/+150°C
Notes: 1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2. Bias conditions must also satisfy the following equation V
DS
* I
DS
< (T
CH
–T
b
)/R
TH
; where T
b
= base plate temperature
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised November 2006
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
