EMA110
UPDATED 11/11/2004
0.5 – 3.0 GHz High Linearity Power MMIC
FEATURES
•
•
•
•
•
•
0.5 – 3.0 GHz BANDWIDTH
27.0dBm TYPICAL OUTPUT POWER
-45dBc OIMD3 @ 17dBm EACH TONE Pout
11.0 dB TYPICAL POWER GAIN
SINGLE BIAS SUPPLY
100% DC TESTED
Dimension: 760um X 700um
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
F
P
1dB
Gss
IMD3
RL
IN
RL
OUT
I
DD
R
TH
PARAMETER/TEST CONDITIONS
1
Operating Frequency Range
Power at 1dB Compression
V
DD
= 8.0V, F = 2.4G
Caution! ESD sensitive device.
MIN
0.5
26.0
10.0
27.0
11.0
-45
-12
-12
170
240
35
-42
-8
-8
270
o
TYP
MAX
3.0
UNITS
GHz
dBm
dB
dBc
dB
dB
mA
C/W
Small Signal Gain
V
DD
= 8.0V, F = 2.4G
rd
Output 3 Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 16dBm
V
DD
= 8.0V, F = 2.4G
Input Return Loss
Output Return Loss
Drain Current
Thermal Resistance
1
V
DD
= 8.0V
V
DD
= 8.0V
Note: 1. Overall Rth depends on die attach.
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION
1,2
SYMBOL
V
DD
V
GG
I
DD
I
GSF
P
IN
P
T
T
CH
T
STG
Gate Voltage
Drain Current
Forward Gate Current
Input Power
Total Power Dissipation
Channel Temperature
Storage Temperature
CHARACTERISTIC
Power Supply Voltage
VALUE
8V
-3 V
IDSS
10 mA
@ 3dB compression
2.8 W
150°C
-65/+150°C
Notes: 1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2. Bias conditions must also satisfy the following equation P
T
< (T
CH
–T
HS
)/R
TH
; where T
HS
= temperature of heatsink,
and P
T
= (V
DD
* I
DD
) – (P
OUT
– P
IN
).
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised November 2004
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
