EID1616-3
UPDATED: 07/24/2008
16.2–16.5 GHz 3-Watt Internally-Matched Power FET
FEATURES
•
16.2-16.5 GHz Bandwidth
•
Input/Output Impedance Matched to 50 Ohms
•
+35.0 dBm Output Power at 1dB Compression
•
6.0 dB Power Gain at 1dB Compression
•
25% Power Added Efficiency
•
Hermetic Metal Flange Package
•
100% Tested for DC, RF, and R
TH
.060 MIN.
Excelics
EID1616-3
.060 MIN.
.650±.008 .512
GATE
DRAIN
.319
YYWW
SN
.094
.382
.022
.045
.004
.070 ±.008
.129
ALL DIMENSIONS IN INCHES
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
f = 16.2-16.5GHz
V
DS
= 10 V, I
DSQ
≈
1200mA
Gain at 1dB Compression
f = 16.2-16.5GHz
V
DS
= 10 V, I
DSQ
≈
1200mA
Gain Flatness
f = 16.2-16.5GHz
V
DS
= 10 V, I
DSQ
≈
1200mA
Power Added Efficiency at 1dB Compression
f = 16.2-16.5GHz
V
DS
= 10 V, I
DSQ
≈
1200mA
Drain Current at 1dB Compression
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
2
f = 16.2-16.5GHz
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 20 mA
1
Caution! ESD sensitive device.
MIN
34.5
5.0
TYP
35.0
6.0
±0.6
25
700
1100
-2.5
8.5
900
1500
-4.0
10.5
o
MAX
UNITS
dBm
dB
dB
%
mA
mA
V
C/W
P
1dB
G
1dB
∆G
PAE
Id
1dB
I
DSS
V
P
R
TH
Notes: 1. Tested with 100 Ohm gate resistor.
2. Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION
1,2
SYMBOL
V
DS
V
GS
I
DS
I
GSF
P
IN
P
T
T
CH
T
STG
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Forward Gate Current
Input Power
Total Power Dissipation
Channel Temperature
Storage Temperature
VALUE
10 V
-4.5 V
IDSS
20 mA
@ 3dB compression
11.5 W
150°C
-65/+150°C
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 2
Revised July 2008
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
