EIC5972-12
UPDATED 11/10/2006
5.90-7.20 GHz 12-Watt Internally Matched Power FET
Excelics
EIC5972-12
945 .803
.079 MIN
.079 MIN
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FEATURES
5.90– 7.20GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+41.5 dBm Output Power at 1dB Compression
9.0 dB Power Gain at 1dB Compression
36% Power Added Efficiency
-46 dBc IM3 at P
out
= 30.5 dBm SCL
Hermetic Metal Flange Package
100% Tested for DC, RF, and R
TH
.024
YYWW
SN
.315
.685
.617
.004
.168
.055
ALL DIMENSIONS IN INCHES
.095
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
∆G
PAE
Id
1dB
IM3
I
DSS
V
P
R
TH
PARAMETERS/TEST CONDITIONS
1
Output Power at 1dB Compression
f = 5.90-7.20GHz
V
DS
= 10 V, I
DSQ
≈
3200mA
Gain at 1dB Compression
f = 5.90-7.20GHz
V
DS
= 10 V, I
DSQ
≈
3200mA
Gain Flatness
f = 5.90-7.20GHz
V
DS
= 10 V, I
DSQ
≈
3200mA
Power Added Efficiency at 1dB Compression
f = 5.90-7.20GHz
V
DS
= 10 V, I
DSQ
≈
3200mA
Drain Current at 1dB Compression
f = 5.90-7.20GHz
Output 3rd Order Intermodulation Distortion
∆f
= 10 MHz 2-Tone Test; Pout = 30.5 dBm S.C.L
2
V
DS
= 10 V, I
DSQ
≈
65% IDSS
f = 7.20GHz
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
3
2) S.C.L. = Single Carrier Level.
Caution! ESD sensitive device.
MIN
40.5
8.0
TYP
41.5
9.0
MAX
UNITS
dBm
dB
±0.8
36
3400
-43
-46
6000
-2.5
2.5
7500
-4.0
3.0
o
dB
%
3800
mA
dBc
mA
V
C/W
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 60 mA
Note: 1) Tested with 50 Ohm gate resistor.
3) Overall Rth depends on case mounting.
MAXIMUM RATING AT 25
o
C
1,2
SYMBOLS
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reverse Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
15
-5
129.6mA
-21.6mA
40.5dBm
175 C
-65 to +175
o
C
50W
o
CONTINUOUS
10V
-4V
43.2mA
-7.2mA
@ 3dB Compression
175
o
C
-65 to +175
o
C
50W
Vds
Vgs
Igsf
Igsr
Pin
Tch
Tstg
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised November 2006
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
