EIC5964-10
UPDATED 08/21/2007
5.90-6.40 GHz 10-Watt Internally Matched Power FET
2X 0.079 MIN
4X 0.102
FEATURES
•
•
•
•
•
•
•
5.90–6.40GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+40.5 dBm Output Power at 1dB Compression
10.0 dB Power Gain at 1dB Compression
37% Power Added Efficiency
-46 dBc IM3 at PO = 29.5 dBm SCL
100% Tested for DC, RF, and R
TH
0.945
0.803
Excelics
EIC5964-10
0.024
0.580
YYWW
SN
0.315
0.685
0.010
0.158
0.617
0.004
0.055
0.095
0.055
0.168
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
∆G
PAE
Id
1dB
IM3
I
DSS
V
P
R
TH
Caution! ESD sensitive device.
MIN
39.5
9.0
PARAMETERS/TEST CONDITIONS
1
Output Power at 1dB Compression f = 5.90-6.40GHz
V
DS
= 10 V, I
DSQ
≈
3200mA
Gain at 1dB Compression
f = 5.90-6.40GHz
V
DS
= 10 V, I
DSQ
≈
3200mA
Gain Flatness
f = 5.90-6.40GHz
V
DS
= 10 V, I
DSQ
≈
3200mA
Power Added Efficiency at 1dB Compression
V
DS
= 10 V, I
DSQ
≈
3200mA
f = 5.90-6.40GHz
Drain Current at 1dB Compression f = 5.90-6.40GHz
Output 3rd Order Intermodulation Distortion
∆f
= 10 MHz 2-Tone Test; Pout = 29.5 dBm S.C.L
2
V
DS
= 10 V, I
DSQ
≈
65% IDSS
f = 6.40GHz
V
DS
= 3 V, V
GS
= 0 V
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
3
TYP
40.5
10.0
MAX
UNITS
dBm
dB
±0.6
37
3200
-43
-46
5800
-2.5
2.5
6400
-4.0
3.0
o
dB
%
3600
mA
dBc
mA
V
C/W
V
DS
= 3 V, I
DS
= 60 mA
Note: 1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING FOR EFE
SYMBOLS
Vds
Vgs
Igf
Igr
Pin
Tch
Tstg
Pt
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reverse Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
15V
-5V
136mA
-27.2mA
40dBm
175C
-65C to +175C
50W
CONTINUOUS
2
10V
-4V
40.8mA
-6.8mA
@ 3dB Compression
175C
-65C to +175C
50W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 4
Revised October 2007
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
