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EIC5359-10 参数 Datasheet PDF下载

EIC5359-10图片预览
型号: EIC5359-10
PDF下载: 下载PDF文件 查看货源
内容描述: 5.30-5.90 GHz的10W内部匹配功率场效应管 [5.30-5.90 GHz 10W Internally Matched Power FET]
分类和应用:
文件页数/大小: 1 页 / 80 K
品牌: EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
   
EIC5359-10
UPDATED 08/16/2005
5.30 – 5.90 GHz 10W Internally Matched Power FET
2X 0.079 MIN
4X 0.102
FEATURES
5.30-5.90 GHz BANDWIDTH AND
INPUT/OUTPUT
IMPEDANCE MATCHED TO 50 OHM
HIGH PAE: 30% TYPICAL
+40.5 dBm TYPICAL P
1dB
OUTPUT POWER
10dB TYPICAL G
1dB
POWER GAIN
HERMETIC METAL FLANGE PACKAGE
Excelics
EIC5359-10
0.945
0.803
0.024
0.580
YYWW
0.315
0.685
0.010
0.158
0.617
0.004
0.055
0.095
0.055
0.168
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
f=5.3-5.9GHz, Vds=10V, Idsq=3200Ma
Gain at 1dB Compression
f=5.3-5.9GHz, Vds=10V, Idsq=3200mA
Gain Flatness
f = 5.3-5.9GHz, Vds = 10 V, Idsq = 3200mA
Power Added Efficiency at 1dB compression
f=5.3-5.9GHz, Vds=10V, Idsq=3200mA
Drain Current at 1dB Compression
Output 3 Order Intermodulation Distortion
f=5.9GHz
2
∆f=10MHz
2-Tone Test. Pout=29.5 dBm S.C.L
Ids @ 65% Idss
Saturated Drain Current
Pinch-off Voltage
Vds=3V, Vgs=0V
Vds=3V, Ids=60mA
rd
1
MIN
39.5
9
TYP
40.5
10
MAX
UNIT
dBm
dB
P
1dB
G
1dB
∆G
PAE
Id
1dB
IM
3
I
dss
V
p
R
th
±0.6
30
3300
-43
-46
5800
-2.5
2.5
6400
-4
3
o
dB
%
3800
mA
dBc
mA
V
C/W
Thermal Resistance
3
(Au-Sn Eutectic Attach)
2) S.C.L = Single Carrier Level.
3) Overall Rth depends on case mounting.
Note: 1) Tested with 50 Ohm gate resistor.
ABSOLUTE MAXIMUM RATING
SYMBOLS
1,2
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Reserve Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
15
-5
I
DSS
120mA
-20.4mA
39.5dBm
175 C
o
-65 to +175 C
o
CONTINUOUS
2
10V
-4V
5000mA
40mA
-6.8mA
@ 3dB Compression
175 C
-65 to +175
o
C
50W
o
Vds
Vgs
Ids
Igsf
Igsr
Pin
Tch
Tstg
Pt
50W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 1
Revised August 2005