EIC4853-25 参数 Datasheet PDF下载

EIC4853-25

4.8-5.30 GHz 25-Watt Internally Matched Power FET

2X 0.079 MIN

4X 0.102

FEATURES

•

•

•

•

•

•

•

4.80 – 5.30GHz Bandwidth

Input/Output Impedance Matched to 50 Ohms

+44.5 dBm Output Power at 1dB Compression

9.5 dB Power Gain at 1dB Compression

36% Power Added Efficiency

Hermetic Metal Flange Package

100% Tested for DC, RF, and R

TH

Excelics

EIC4853-25

0.945

0.803

0.024

0.580

YYWW

SN

0.315

0.685

0.010

0.158

0.617

0.004

0.055

0.095

0.055

0.168

ELECTRICAL CHARACTERISTICS (T

b

= 25°C)

SYMBOL

P

1dB

G

1dB

∆G

PAE

Id

1dB

I

DSS

V

P

R

TH

1.

Caution! ESD sensitive device.

MIN

43.5

9

PARAMETERS/TEST CONDITIONS

1

Output Power at 1dB Compression

f = 4.80-5.30 GHz

V

DS

= 10 V, I

DSQ

≈

6500mA

Gain at 1dB Compression

f = 4.80-5.30 GHz

V

DS

= 10 V, I

DSQ

≈

6500mA

Gain Flatness

f = 4.80-5.30 GHz

V

DS

= 10 V, I

DSQ

≈

6500mA

Power Added Efficiency at 1dB Compression

V

DS

= 10 V, I

DSQ

≈

6500mA

f = 4.80-5.30 GHz

Drain Current at 1dB Compression

Saturated Drain Current

Pinch-off Voltage

Thermal Resistance

2

f = 4.80-5.30 GHz

V

DS

= 3 V, V

GS

= 0 V

V

DS

= 3 V, I

DS

= 130 mA

TYP

44.5

10

MAX

UNITS

dBm

dB

±0.6

36

7050

11

-2.5

1.4

8300

16

-4.0

1.8

o

dB

%

mA

A

V

C/W

2.

Tested with 15 Ohm gate resistor, forward and reverse gate current should not exceed 130mA and -10.5mA respectively

Overall Rth depends on case mounting.

MAXIMUM RATING AT

T

b

= 25°C

1,2

SYMBOLS

PARAMETERS

Drain-Source Voltage

Gate-Source Voltage

Input Power

Channel Temperature

Storage Temperature

Total Power Dissipation

ABSOLUTE

1

15

-5

38 dBm

175 C

-65 to +175

o

C

83W

o

OPERATING

2

10V

-4V

@ 3dB Compression

175

o

C

-65 to +175

o

C

83W

Vds

Vgs

Pin

Tch

Tstg

Pt

Note: 1. Operating the device beyond the absolute maximum rating may cause permanent damage.

2. Operating beyond the absolute maximum ratings may reduce MTTF of the device.

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

Phone: 408-737-1711 Fax: 408-737-1868 Web:

www.excelics.com

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