EIC2832-2
UPDATED 02/14/2006
2.80-3.20 GHz 2-Watt Internally Matched Power FET
Excelics
EIC2832-2
.827±.010 .669
.120 MIN
FEATURES
•
•
•
•
•
•
•
•
2.80– 3.20GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+33.5 dBm Output Power at 1dB Compression
12.0 dB Power Gain at 1dB Compression
35% Power Added Efficiency
-46 dBc IM3 at PO = 22.5 dBm SCL
Hermetic Metal Flange Package
100% Tested for DC, RF, and R
TH
.024
.421
YYWW
SN
.120 MIN
.125
.508±.008
.442
.168±.010
ALL DIMENSIONS IN INCHES
.004
.063
.004
.105±.008
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
PARAMETERS/TEST CONDITIONS
1
SYMBOL
P
1dB
G
1dB
∆G
PAE
Id
1dB
IM3
I
DSS
V
P
R
TH
Output Power at 1dB Compression
f = 2.80-3.20GHz
V
DS
= 10 V, I
DSQ
≈
550mA
Gain at 1dB Compression
f = 2.80-3.20GHz
V
DS
= 10 V, I
DSQ
≈
550mA
Gain Flatness
f = 2.80-3.20GHz
V
DS
= 10 V, I
DSQ
≈
550mA
Power Added Efficiency at 1dB Compression
f = 2.80-3.20GHz
V
DS
= 10 V, I
DSQ
≈
550mA
Drain Current at 1dB Compression
f = 2.80-3.20GHz
Output 3rd Order Intermodulation Distortion
2
∆f
= 10 MHz 2-Tone Test; Pout = 22.5 dBm S.C.L
V
DS
= 10 V, I
DSQ
≈
65% IDSS
f = 3.20GHz
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
3
2) S.C.L. = Single Carrier Level.
Caution! ESD sensitive device.
MIN
32.5
11.0
TYP
33.5
12.0
MAX
UNITS
dBm
dB
±0.6
35
600
-43
-46
1000
-2.5
11
1250
-4.0
12
o
dB
%
700
mA
dBc
mA
V
C/W
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 10 mA
Note: 1) Tested with 100 Ohm gate resistor.
3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING
1,2
SYMBOLS
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reserve Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
15
-5
21.6mA
-3.6mA
32.5dBm
175 C
-65 to +175
o
C
12.5W
o
CONTINUOUS
2
10V
-4V
7.2mA
-1.2mA
@ 3dB Compression
175
o
C
-65 to +175
o
C
12.5W
Vds
Vgs
Igsf
Igsr
Pin
Tch
Tstg
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 1
Revised February 2006
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
