EIC1415-12 参数 Datasheet PDF下载

EIC1415-12

14.40-15.40GHz 12-Watt Internally Matched Power FET

FEATURES

•

•

•

•

•

•

•

•

14.40– 15.40GHz Bandwidth

Input/Output Impedance Matched to 50 Ohms

+41 dBm Output Power at 1dB Compression

5 dB Power Gain at 1dB Compression

23% Power Added Efficiency

-44 dBc IM3 at Po = 30 dBm SCL

Hermetic Metal Flange Package

100% Tested for DC, RF, and R

TH

Excelics

EIC1415-12

.827±.010 .669

.120 MIN

.024

.421

YYWW

SN

.120 MIN

.125

.508±.008

.442

.168±.010

ALL DIMENSIONS IN INCHES

.004

.063

.004

.105±.008

ELECTRICAL CHARACTERISTICS (T

a

= 25°C)

SYMBOL

P

1dB

G

1dB

∆G

PAE

Id

1dB

IM3

I

DSS

V

P

R

TH

PARAMETERS/TEST CONDITIONS

1

Output Power at 1dB Compression

f = 14.40-15.40GHz

V

DS

= 10 V, I

DSQ

≈

3200mA

Gain at 1dB Compression

f = 14.40-15.40GHz

V

DS

= 10 V, I

DSQ

≈

3200mA

Gain Flatness

f = 14.40-15.40GHz

V

DS

= 10 V, I

DSQ

≈

3200mA

Power Added Efficiency at 1dB Compression

V

DS

= 10 V, I

DSQ

≈

3200mA

f = 14.40-15.40GHz

Drain Current at 1dB Compression

f = 14.40-15.40GHz

Caution! ESD sensitive device.

MIN

40

4

TYP

41

5

MAX

UNITS

dBm

dB

±0.7

23

3700

-41

-44

9000

-2.5

1.8

13000

-4.0

2.1

o

dB

%

4200

mA

dBc

mA

V

C/W

Output 3rd Order Intermodulation Distortion

∆f

= 10 MHz 2-Tone Test; Pout = 30 dBm S.C.L

2

V

DS

= 10 V, I

DSQ

≈

65% IDSS

f = 15.40GHz

Saturated Drain Current

Pinch-off Voltage

Thermal Resistance

3

V

DS

= 3 V, V

GS

= 0 V

V

DS

= 3 V, I

DS

= 84 mA

Note: 1. Tested with 30 Ohm gate resistor, forward and reverse gate current should nopt exceed 35mA and -5.1mA respectively.

2. S.C.L. = Single Carrier Level.

3. Overall Rth depends on case mounting.

ABSOLUTE MAXIMUM RATING

SYMBOLS

PARAMETERS

ABSOLUTE

15V

-5V

Output power reach 3dB

Gain Compression point

175°C

-65°C to +175°C

71W

1

OPERATING

10V

-4V

2

Vds

Vgs

Pin

Tch

Tstg

Pt

Drain-Source Voltage

Gate-Source Voltage

Input Power

Channel Temperature

Storage Temperature

Total Power Dissipation (Tc=25

°

)

Output power reach 3dB

Gain Compression point

175°C

-65°C to +175°C

71W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

Phone: 408-737-1711 Fax: 408-737-1868 Web:

www.excelics.com

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