EIC1414-12
ISSUED 6/30/2006
14.0-14.5 GHz 12-Watt Internally Matched Power FET
Excelics
EIC1414-12
.827±.010 .669
.120 M IN
.120 M IN
FEATURES
•
•
•
•
•
•
14.0– 14.5GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+40.5 dBm Output Power at 1dB Compression
5.0 dB Power Gain at 1dB Compression
20% Power Added Efficiency
Hermetic Metal Flange Package
.024
.421
.125
.508±.008
.442
.168±.010
ALL DIM ENSIO NS IN IN CHES
.004
.063
.004
.105±.008
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
∆G
PAE
Id
1dB
I
DSS
V
P
R
TH
PARAMETERS/TEST CONDITIONS
1
Output Power at 1dB Compression
f = 14.0-14.5GHz
V
DS
= 10 V, I
DSQ
≈
3500mA
Gain at 1dB Compression
f = 14.0-14.5GHz
V
DS
= 10 V, I
DSQ
≈
3500mA
Gain Flatness
f = 14.0-14.5GHz
V
DS
= 10 V, I
DSQ
≈
3500mA
Power Added Efficiency at 1dB Compression
V
DS
= 10 V, I
DSQ
≈
3500mA
f = 14.0-14.5GHz
Drain Current at 1dB Compression
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
3
2) S.C.L. = Single Carrier Level.
Caution! ESD sensitive device.
MIN
39.5
4.0
TYP
40.5
5.0
MAX
UNITS
dBm
dB
±0.6
20
3600
6000
-2.5
2.3
4200
7500
-4.0
2.6
o
dB
%
mA
mA
V
C/W
f = 14.0-14.5GHz
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 60 mA
Note: 1) Tested with 50 Ohm gate resistor.
3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING
1,2
SYMBOLS
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reverse Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
15
-5
136mA
-23mA
39.5dBm
o
175 C
o
-65 to +175 C
CONTINUOUS
2
10V
-4V
45mA
-8mA
@ 3dB Compression
175
o
C
-65 to +175
o
C
58W
Vds
Vgs
Igsf
Igsr
Pin
Tch
Tstg
Pt
58W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 1
Revised June 2006