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EIC1213-12 参数 Datasheet PDF下载

EIC1213-12图片预览
型号: EIC1213-12
PDF下载: 下载PDF文件 查看货源
内容描述: 12.75-13.25 GHz的12瓦内部匹配功率场效应管 [12.75-13.25 GHz 12-Watt Internally Matched Power FET]
分类和应用:
文件页数/大小: 2 页 / 95 K
品牌: EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
 浏览型号EIC1213-12的Datasheet PDF文件第2页  
EIC1213-12
ISSUED 3-19-09
12.75-13.25 GHz 12-Watt Internally Matched Power FET
Excelics
EIC1213-12
.827±.010 .669
.120 MIN
FEATURES
12.75– 13.25 GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+41 dBm Output Power at 1dB Compression
6 dB Power Gain at 1dB Compression
25% Power Added Efficiency
Hermetic Metal Flange Package
100% Tested for DC, RF, and R
TH
.024
.421
YYWW
SN
.120 MIN
.125
.508±.008
.442
.168±.010
ALL DIMENSIONS IN INCHES
.004
.063
.004
.105±.008
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
∆G
IMD3
PAE
Id
1dB
I
DSS
V
P
R
TH
PARAMETERS/TEST CONDITIONS
1
Output Power at 1dB Compression
f = 12.75-13.25GHz
V
DS
= 10 V, I
DSQ
3700mA
Gain at 1dB Compression
f = 12.75-13.25GHz
V
DS
= 10 V, I
DSQ
3700mA
Gain Flatness
f = 12.75-13.25GHz
V
DS
= 10 V, I
DSQ
≈3700mA
Output 3rd Order Intermodulation Distortion
∆f
= 10 MHz 2-Tone Test; Pout = 30.0 dBm S.C.L
2
V
DS
= 10 V, I
DSQ
65% IDSS
f = 13.25 GHz
Power Added Efficiency at 1dB Compression
V
DS
= 10 V, I
DSQ
3700mA
f = 12.75-13.25GHz
Drain Current at 1dB Compression
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
3
2) S.C.L. = Single Carrier Level.
Caution! ESD sensitive device.
MIN
40.5
5
TYP
41
6
MAX
UNITS
dBm
dB
±0.6
-41
-45
25
3800
8
-2.5
1.8
4300
10
-4.0
2.1
o
dB
dBc
%
mA
A
V
C/W
f = 12.75-13.25GHz
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 75 mA
Note: 1) Tested with 30 Ohm gate resistor.
3) Overall Rth depends on case mounting.
MAXIMUM RATING AT 25°C
1,2
SYMBOLS
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
15
-5
37.5dBm
175
o
C
-65 to +175
o
C
71.5W
CONTINUOUS
2
10V
-4V
@ 3dB Compression
175
o
C
-65 to +175
o
C
71.5W
Vds
Vgs
Pin
Tch
Tstg
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
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Revision A1