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EIC1010A-8 参数 Datasheet PDF下载

EIC1010A-8图片预览
型号: EIC1010A-8
PDF下载: 下载PDF文件 查看货源
内容描述: 10.00-10.25 GHz的8瓦内部匹配功率场效应管 [10.00-10.25 GHz 8-Watt Internally Matched Power FET]
分类和应用:
文件页数/大小: 4 页 / 155 K
品牌: EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
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EIC1010A-8
UPDATED 07/20/2005
10.00-10.25 GHz 8-Watt Internally Matched Power FET
FEATURES
10.00– 10.25GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+39.0 dBm Output Power at 1dB Compression
7.0 dB Power Gain at 1dB Compression
31% Power Added Efficiency
-46 dBc IM3 at Po = 28 dBm SCL
Hermetic Metal Flange Package
100% Tested for DC, RF, and R
TH
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
∆G
PAE
Id
1dB
IM3
I
DSS
V
P
R
TH
PARAMETERS/TEST CONDITIONS
1
Output Power at 1dB Compression
f = 10.00-10.25GHz
V
DS
= 9 V, I
DSQ
2200mA
Gain at 1dB Compression
f = 10.00-10.25GHz
V
DS
= 9 V, I
DSQ
2200mA
Gain Flatness
f = 10.00-10.25GHz
V
DS
= 9 V, I
DSQ
2200mA
Power Added Efficiency at 1dB Compression
f = 10.00-10.25GHz
V
DS
= 9 V, I
DSQ
2200mA
Drain Current at 1dB Compression
f = 10.00-10.25GHz
Output 3rd Order Intermodulation Distortion
∆f
= 10 MHz 2-Tone Test; Pout = 28 dBm S.C.L
2
V
DS
= 9 V, I
DSQ
65% IDSS
f = 10.25 GHz
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
3
2.) S.C.L. = Single Carrier Level.
Caution! ESD sensitive device.
MIN
38.0
6.5
TYP
39.0
7.5
MAX
UNITS
dBm
dB
±0.5
31
2300
-43
-46
4000
-2.5
3.5
5000
-4.0
4.0
o
dB
%
2600
mA
dBc
mA
V
C/W
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 40 mA
Note: 1.) Tested with 100 Ohm gate resistor.
3.) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING
1,2
SYMBOL
V
DS
V
GS
I
DS
I
GSF
P
IN
P
T
T
CH
T
STG
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Forward Gate Current
Input Power
Total Power Dissipation
Channel Temperature
Storage Temperature
VALUE
10 V
-4.5 V
IDSS
80 mA
@ 3dB compression
38 W
175°C
-65/+175°C
Notes: 1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2. Bias conditions must also satisfy the following equation P
T
< (T
CH
–T
PKG
)/R
TH
; where T
PKG
= temperature of package, and
P
T
= (V
DS
* I
DS
) – (P
OUT
– P
IN
).
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 4
Revised July 2005