EIC0910-5
ISSUED DATE: 04-19-04
9.50-10.50GHz,
5W Internally Matched Power FET
•
•
•
•
•
9.50-10.50 GHz BANDWIDTH AND INPUT/OUTPUT
IMPEDANCE MATCHED TO 50 OHM
HIGH PAE: 30% TYPICAL
+37.5 dBm TYPICAL P
1dB
OUTPUT POWER
7dB TYPICAL G
1dB
POWER GAIN
HERMETIC METAL FLANGE PACKAGE
SN
Excelics
EIC0910-5
YM
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
EIC0910-5
SYMBOLS
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
f=9.5-10.5GHz, Vds=10V, Idsq=1600mA
Gain at 1dB Compression
f=9.5-10.5GHz, Vds=10V, Idsq=1600mA
Gain Flatness
f = 9.5-10.5GHz, Vds = 10 V, Idsq = 1600mA
Power Added Efficiency at 1dB compression
f=9.5-10.5GHz, Vds=10V, Idsq=1600mA
Drain Current at 1dB Compression
Output 3
rd
Order Intermodulation Distortion f=10.5GHz
∆f=10MHz
2-Tone Test. Pout=26.5 dBm S.C.L
Ids @ 65% Idss
Saturated Drain Current
Pinch-off Voltage
Vds=3V, Vgs=0V
Vds=3V, Ids=30mA
MIN
36.5
6
TYP
37.5
7
±0.6
30
1700
1900
MAX
UNIT
dBm
dB
dB
%
mA
dBc
-43
-46
2900
-2.5
5.0
3500
-4
5.5
o
P
1dB
G
1dB
∆G
PAE
Id
1dB
IM
3
I
dss
V
p
R
th
mA
V
C/W
Thermal Resistance (Au-Sn Eutectic Attach)
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION AT 25°C
SYMBOLS
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
CONTINUOUS
1,2
10V
-4.5V
Idss
60mA
@ 3dB Compression
150
o
C
-65 to +150
o
C
23W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
