Excelics
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EIA/EIB1718A-1P
17.3-18.1GHz, 1W Internally Matched Power FET
PRELIMINARY DATA SHEET
17.3-18.1GHz BANDWIDTH AND INPUT/OUTPUT
IMPEDANCE MATCHED TO 50 OHM
EIA FEATURES HIGH PAE( 25% TYPICAL)
EIB FEATURES HIGH IP3(43dBm TYPICAL)
+30.5/+29.5dBm TYPICAL P
1dB
OUTPUT POWER FOR
EIA/EIB
7.5/6.0dB TYPICAL G
1dB
POWER GAIN FOR EIA/EIB
NON-HERMETIC METAL FLANGE PACKAGE
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
EIA1718A-1P
SYMBOLS
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression f=17.3-18.1GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
Gain at 1dB Compression
f=17.3-18.1GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
Power Added Efficiency at 1dB compression
f=17.3-18.1GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
Drain Current at 1dB Compression
Output 3
rd
Order Intercept Point
f=17.3-18.1GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
Saturated Drain Current Vds=3V, Vgs=0V
Transconductance
Pinch-off Voltage
Vds=3V, Vgs=0V
Vds=3V, Ids=6mA
-13
550
MIN
29
6.5
TYP
30.5
7.5
MAX
EIB1718A-1P
MIN
29.0
5.5
TYP
29.5
6.0
MAX
UNIT
dBm
dB
P
1dB
G
1dB
PAE
Id
1dB
IP
3
I
dss
G
m
V
p
BV
gd
30
440
37
720
760
-1.0
-15
16
-2.5
850
550
25
425
43*
720
360
-2.0
-15
16
o
%
mA
dBm
850
mA
mS
-3.5
V
V
C/W
Drain Breakdown Voltage Igd=2.4mA
Thermal Resistance (Au-Sn Eutectic Attach)
R
th
*Typical –45dBc IM3 at Pout=20dBm/Tone
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
12V
-8V
Idss
90mA
32dBm
175 C
-65/175
o
C
8.5
o
CONTINUOUS
2
8V
-3V
Idss
15mA
@ 3dB Compression
150
o
C
-65/150
o
C
7.1W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
