EIA7785-2
UPDATED 11/16/2006
7.70-8.50GHz 2-Watt Internally Matched Power FET
FEATURES
•
•
•
•
•
•
•
7.70– 8.50GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+34 dBm Output Power at 1dB Compression
12.5 dB Power Gain at 1dB Compression
33% Power Added Efficiency
Hermetic Metal Flange Package
100% Tested for DC, RF, and R
TH
.060 MIN.
.650±.008 .512
EIA7785-2
GATE
Excelics
YYWW
.060 MIN.
DRAIN
.319
.022
SN
.094
.382
.004
.129
.070 ±.008
.045
ALL DIMENSIONS IN INCHES
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
∆G
PAE
Id
1dB
I
DSS
V
P
R
TH
PARAMETERS/TEST CONDITIONS
1
Output Power at 1dB Compression f = 7.70-8.50GHz
V
DS
= 8V, I
DSQ
≈
800mA
Gain at 1dB Compression
f = 7.70-8.50GHz
V
DS
= 8V, I
DSQ
≈
800mA
Gain Flatness
f = 7.70-8.50GHz
V
DS
= 8V, I
DSQ
≈
800mA
Power Added Efficiency at 1dB Compression
V
DS
= 8V, I
DSQ
≈
800mA
f = 7.70-8.50GHz
Drain Current at 1dB Compression f = 7.70-8.50GHz
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
2
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 14 mA
Caution! ESD sensitive device.
MIN
33.0
11.5
TYP
34.0
12.5
±0.6
33
900
1400
-1.0
10
1100
1800
-2.5
11
o
MAX
UNITS
dBm
dB
dB
%
mA
mA
V
C/W
Note: 1. Tested with 100 Ohm gate resistor.
2. Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING
1,2
SYMBOLS
PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
V
DS
V
GS
Igsf
Igsr
Pin
Tch
Tstg
Pt
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reverse Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
12
-5
21.6mA
-3.6mA
33dBm
175
o
C
-65 to +175
o
C
13W
8V
-3V
7.2mA
-1.2mA
@ 3dB Compression
175
o
C
-65 to +175
o
C
13W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised November 2006