EIA7785-6
UPDATED 11/30/2005
7.70-8.50 GHz 6-Watt Internally Matched Power FET
Excelics
EIA7785-6
.827±.010 .669
.120 MIN
FEATURES
•
•
•
•
•
•
7.70– 8.50GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+38.5 dBm Output Power at 1dB Compression
10 dB Power Gain at 1dB Compression
36% Power Added Efficiency
Hermetic Metal Flange Package
.024
.421
YYWW
SN
.120 MIN
.125
.508±.008
.442
.168±.010
ALL DIMENSIONS IN INCHES
.004
.063
.004
.105±.008
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
∆G
PAE
Id
1dB
I
DSS
V
P
R
TH
PARAMETERS/TEST CONDITIONS
1
Output Power at 1dB Compression
f = 7.70-8.50GHz
V
DS
= 8 V, I
DSQ
≈
2000mA
Gain at 1dB Compression
f = 7.70-8.50GHz
V
DS
= 8 V, I
DSQ
≈
2000mA
Gain Flatness
f = 7.70-8.50GHz
V
DS
= 8 V, I
DSQ
≈
2000mA
Power Added Efficiency at 1dB Compression
f = 7.70-8.50GHz
V
DS
= 8 V, I
DSQ
≈
2000mA
Drain Current at 1dB Compression
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
3
2) S.C.L. = Single Carrier Level.
Caution! ESD sensitive device.
MIN
37.5
9
TYP
38.5
10
MAX
UNITS
dBm
dB
±0.6
36
2200
3900
-1.0
4.0
2500
4800
-2.5
4.5
o
dB
%
mA
mA
V
C/W
f = 7.70-8.50GHz
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 39mA
Note: 1) Tested with 100 Ohm gate resistor.
3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING
1,2
SYMBOLS
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Reserve Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
12
-5
I
DSS
61.2mA
-10.2mA
37.5dBm
o
175 C
o
-65 to +175 C
CONTINUOUS
2
8V
-3V
4.1A
20.4mA
-3.4mA
@ 3dB Compression
175
o
C
-65 to +175
o
C
33W
Vds
Vgs
Ids
Igsf
Igsr
Pin
Tch
Tstg
Pt
33W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 1
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised November 2005
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
