Excelics
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13.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT
IMPEDANCE MATCHED TO 50 OHM
FEATURES HIGH PAE( 30% TYPICAL)
33.0dBm TYPICAL P
1dB
OUTPUT POWER
9dB TYPICAL G
1dB
POWER GAIN
NON-HERMETIC METAL FLANGE PACKAGE
EIA1314A-2P
Not recommended for new designs. Contact factory. Effective 03/2003
13.0-14.5GHz, 2W Internally Matched Power FET
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
EIA1314A-2P
SYMBOLS
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression f=13.0-14.5GHz
Vds=8V, Idsq=0.5 Idss
Gain at 1dB Compression
Vds=8V, Idsq=0.5 Idss
f=13.0-14.5GHz
MIN
32.5
8
TYP
33.0
9
MAX
UNIT
dBm
dB
P
1dB
G
1dB
PAE
Id
1dB
IP
3
I
dss
G
m
V
p
BV
gd
R
th
Power Added Efficiency at 1dB compression
f=13.0-14.5GHz
Vds=8V, Idsq=0.5 Idss
Drain Current at 1dB Compression
Output 3
rd
Order Intercept Point
Vds=8V, Idsq=0.5 Idss
f=13.0-14.5GHz
1100
30
880
40
1440
1500
-1.0
-13
-15
8
o
%
mA
dBm
1700
mA
mS
-2.5
V
V
C/W
Saturated Drain Current Vds=3V, Vgs=0V
Transconductance
Pinch-off Voltage
Vds=3V, Vgs=0V
Vds=3V, Ids=12mA
Drain Breakdown Voltage Igd=4.8mA
Thermal Resistance (Au-Sn Eutectic Attach)
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
12V
-8V
Idss
180mA
32dBm
175 C
-65/175
o
C
17W
o
CONTINUOUS
2
8V
-3V
Idss
30mA
@ 3dB Compression
150
o
C
-65/150
o
C
14.2W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 310 De Guine Drive, Sunnyvale, CA 94085
Phone: (408) 737-1711 Fax: (408) 737-1868 Web Site: www.excelics.com
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
