EIA1114-4
UPDATED 07/25/2006
11.0-14.0GHz 4-Watt Internally Matched Power FET
FEATURES
•
•
•
•
•
•
•
•
11.0– 14.0GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+36.5 dBm Output Power at 1dB Compression
7.0 dB Power Gain at 1dB Compression
25% Power Added Efficiency
-36 dBc IM3 at Po = 25.5 dBm SCL
Hermetic Metal Flange Package
100% Tested for DC, RF, and R
TH
.060 MIN.
Excelics
EIA1114-4
YYWW
SN
.094
.382
.060 MIN.
.650±.008 .512
GATE
.319
DRAIN
.022
.045
.004
.070 ±.008
.129
ALL DIMENSIONS IN INCHES
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
∆G
PAE
Id
1dB
IM3
I
DSS
V
P
R
TH
PARAMETERS/TEST CONDITIONS
1
Output Power at 1dB Compression
f = 11.0-14.0GHz
V
DS
= 8 V, I
DSQ
≈
1500mA
Gain at 1dB Compression
f = 11.0-14.0GHz
V
DS
= 8 V, I
DSQ
≈
1500mA
Gain Flatness
f = 11.0-14.0GHz
V
DS
= 8 V, I
DSQ
≈
1500mA
Power Added Efficiency at 1dB Compression
f = 11.0-14.0GHz
V
DS
= 8 V, I
DSQ
≈
1500mA
Drain Current at 1dB Compression
f = 11.0-14.0GHz
Caution! ESD sensitive device.
MIN
35.5
6.0
TYP
36.5
7.0
MAX
UNITS
dBm
dB
±0.8
25
1700
-36
2880
-1.0
5.5
3600
-2.5
6.0
o
dB
%
2000
mA
dBc
mA
V
C/W
Output 3rd Order Intermodulation Distortion
∆f
= 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L
2
V
DS
= 8 V, I
DSQ
≈
65% IDSS
f = 14.0GHz
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
3
2) S.C.L. = Single Carrier Level.
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 29 mA
Note: 1) Tested with 100 Ohm gate resistor.
3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING
1,2
SYMBOLS
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reverse Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
10
-5
43.2mA
-7.2mA
35.5dBm
o
175 C
o
-65 to +175 C
CONTINUOUS
2
8V
-3V
14.4mA
-2.4mA
@ 3dB Compression
175
o
C
-65 to +175
o
C
25W
Vds
Vgs
Igsf
Igsr
Pin
Tch
Tstg
Pt
25W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 1
Revised July 2006
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
