EFC240B-180F
ISSUED 10/04/2006
Low Distortion GaAs Power FET
FEATURES
•
•
•
•
•
•
NON-HERMETIC 180MIL METAL FLANGE PACKAGE
+31.0 dBm TYPICAL OUTPUT POWER
16.5 dB TYPICAL POWER GAIN AT 2GHz
0.3 x 2400 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Caution! ESD sensitive device.
MIN
29.0
15.0
TYP
31.0
31.0
16.5
11.5
40
320
200
520
280
-2.5
-18
-10
-20
-17
22*
o
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
PAE
I
DSS
G
M
V
P
BV
GD
BV
GS
R
th
PARAMETERS/TEST CONDITIONS
1
Output Power at 1dB Compression
f = 2GHz
f = 4GHz
V
DS
= 10 V, I
DS
≈
50% I
DSS
Gain at 1dB Compression
f = 2GHz
f = 4GHz
V
DS
= 10 V, I
DS
≈
50% I
DSS
Power Added Efficiency at 1dB Compression
f = 2GHz
V
DS
= 10 V, I
DS
≈
50% I
DSS
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
Transconductance
Pinch-off Voltage
Drain Breakdown Voltage
Source Breakdown Voltage
Thermal Resistance
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 6 mA
I
GD
= 2.4 mA
I
GS
= 2.4 mA
MAX
UNITS
dBm
dB
%
720
mA
mS
-4.0
V
V
V
C/W
* Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
V
DS
V
GS
Igf
Igr
Pin
Tch
Tstg
Pt
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reverse Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
15V
5V
10.8mA
-1.8mA
29dBm
175
o
C
-65/175
o
C
6W
CONTINUOUS
2
10V
-4.5V
3.6mA
-0.6mA
@ 3dB Compression
175
o
C
-65/175
o
C
6W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 1
Revised October 2006
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
