Excelics
PRELIMINARY DATA SHEET
EFB025A
420
50
104
General Purpose GaAs FET
•
•
•
•
•
•
•
+18.5dBm TYPICAL OUTPUT POWER
11.0dB TYPICAL POWER GAIN AT 12GHz
TYPICAL 1.3 dB NOISE FIGURE AND 11 dB ASSOCIATED
GAIN AT 12GHz
0.3 X 250 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Idss SORTED IN 5mA PER BIN RANGE
D
D
48
260
40
S
G
G
S
90
59
50
78
Chip Thickness: 75
±
13 microns
All Dimensions In Microns
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
P
1dB
G
1dB
NF
G
A
Idss
Gm
Vp
BVgd
BVgs
Rth
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
Vds=6V, Ids=50% Idss
Gain at 1dB Compression
Vds=6V, Ids=50% Idss
Noise Figure Vds=3V,Ids=15mA
Associated Gain Vds=3V,Ids=15mA
Transconductance
Pinch-off Voltage
f=12GHz
f=18GHz
f=12GHz
f=18GHz
f=12GHz
f=12GHz
35
40
-5.5
-5.5
9
MIN
17
TYP
18.5
18.5
11
9
1.3
11
65
60
-1.5
-8.5
-8.5
155
o
MAX
UNIT
dBm
dB
dB
dB
Saturated Drain Current Vds=3V, Vgs=0V
Vds=3V, Vgs=0V
Vds=3V, Ids=1.0mA
105
-3.0
mA
mS
V
V
V
C/W
Drain Breakdown Voltage Igd=100uA
Source Breakdown Voltage Igs=100uA
Thermal Resistance (Au-Sn Eutectic Attach)
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
Vds
Vgs
Ids
Drain-Source Voltage
Gate-Source Voltage
Drain Current
ABSOLUTE
1
10V
-6V
Idss
CONTINUOUS
2
6V
-4V
Idss
Forward Gate Current
6mA
1mA
Igsf
Input Power
16dBm
@ 3dB Compression
Pin
o
Channel Temperature
175 C
150
o
C
Tch
Storage Temperature
-65/175
o
C
-65/150
o
C
Tstg
Total Power Dissipation
880mW
730mW
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
