EFA960B
DATA SHEET
Low Distortion GaAs Power FET
FREQ
(GHz)
0.500
1.000
1.500
2.000
2.500
3.000
3.500
4.000
4.500
5.000
5.500
6.000
6.500
7.000
7.500
8.000
8.500
9.000
9.500
10.000
Note:
--- S11 ---
MAG ANG
0.963 -150.4
0.962 -165.8
0.961 -171.5
0.961 -174.6
0.962 -176.7
0.962 -178.3
0.962 -179.6
0.962 179.2
0.963 178.2
0.963 177.3
0.964 176.4
0.964 175.6
0.965 174.8
0.965 174.1
0.966 173.3
0.966 172.6
0.967 171.9
0.968 171.2
0.968 170.5
0.969 169.8
8V, 1/2 Idss
--- S21 ---
MAG ANG
6.232 100.8
3.195
89.5
2.140
83.1
1.608
77.9
1.287
73.2
1.072
68.9
0.919
64.7
0.803
60.7
0.713
56.8
0.641
53.0
0.582
49.3
0.532
45.8
0.490
42.3
0.453
38.9
0.421
35.7
0.392
32.5
0.367
29.5
0.344
26.6
0.324
23.7
0.305
21.0
--- S12 ---
MAG
ANG
0.015
20.2
0.015
18.3
0.016
21.0
0.016
24.7
0.017
28.6
0.018
32.5
0.018
36.2
0.019
39.7
0.020
42.9
0.021
45.9
0.022
48.6
0.024
51.0
0.025
53.2
0.026
55.2
0.028
56.9
0.029
58.5
0.031
59.9
0.033
61.1
0.034
62.2
0.036
63.2
--- S22 ---
MAG ANG
0.741 -176.3
0.750 -177.8
0.753 -178.3
0.755 -178.5
0.758 -178.5
0.761 -178.5
0.764 -178.6
0.768 -178.6
0.772 -178.6
0.776 -178.6
0.781 -178.7
0.786 -178.8
0.791 -178.9
0.797 -179.0
0.802 -179.2
0.808 -179.4
0.814 -179.6
0.819 -179.8
0.825 179.9
0.831 179.6
The data included 0.7 mils diameter Au bonding wires:
4 gate wires, 20 mils each; 4 drain wires, 12 mils each; 10 source wires, 7 mils each.
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
