EFA720AV-CP083
UPDATED 01/30/2006
Low Distortion GaAs Power FET
720AV
EFA
FEATURES
•
•
•
•
•
•
NON-HERMETIC SURFACE MOUNT
160MIL METAL CERAMIC PACKAGE
+33.5dBm OUTPUT POWER
17.0 dB TYPICAL POWER GAIN AT 2 GHz
0.5x4800 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION PROFLIE
PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH
RELIABILITY
●
All Dimensions in mil
Tolerance: ± 3 mil
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
PAE
I
DSS
G
M
V
P
BV
GD
BV
GS
R
TH
*
PARAMETER/TEST CONDITIONS
Output Power at 1dB Compression
f=
Vds = 8 V, Ids=50% Idss
f=
Gain at 1dB Compression
f=
Vds = 8 V, Ids=50% Idss
f=
Power Added Efficiency at 1dB Compression
Vds = 8 V, Ids=50% Idss
f=
Saturated Drain Current
Transconductance
Pinch-off Voltage
Drain Breakdown Voltage
Source Breakdown Voltage
Thermal Resistance
2.0 GHz
4.0 GHz
2.0 GHz
4.0 GHz
2.0 GHz
1200
840
MIN
33.5
15.5
TYP
35.5
35.5
17.0
12.0
36
2040
1100
-2.0
-13
-7
-15
-14
6*
o
MAX
UNITS
dBm
dB
%
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 10 mA
I
GD
= 7.2 mA
I
GS
= 7.2 mA
2640
mA
mS
-3.5
V
V
V
C/W
Notes:
*
Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
Vds
Vgs
Igsf
Igsr
Pin
Tch
Tstg
Pt
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reserve Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
12V
-5V
32.4 mA
5.4 mA
32.5 dBm
175
o
C
-65/175
o
C
20 W
CONTINUOUS
2
8V
-3V
10.8 mA
1.8 mA
@ 3dB Compression
175
o
C
-65/175
o
C
20 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 1
Revised January 2006
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
