欢迎访问ic37.com |
会员登录 免费注册
发布采购

EFA120B 参数 Datasheet PDF下载

EFA120B图片预览
型号: EFA120B
PDF下载: 下载PDF文件 查看货源
内容描述: 低失真功率的GaAs FET [Low Distortion GaAs Power FET]
分类和应用:
文件页数/大小: 2 页 / 36 K
品牌: EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
 浏览型号EFA120B的Datasheet PDF文件第2页  
Excelics
EFA120B/EFA120BV
DATA SHEET
Low Distortion GaAs Power FET
550
+28.0dBm TYPICAL OUTPUT POWER
9.5dB TYPICAL POWER GAIN FOR EFA120B AND
11.5dB FOR EFA120BV AT 12GHz
0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
EFA120BV WITH VIA HOLE SOURCE GROUNDING
Idss SORTED IN 20mA PER BIN RANGE
50
156
D
D
48
350
100
40
G
G
Chip Thickness: 75
±
20 microns
All Dimensions In Microns
95
50
120
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN
P
1dB
G
1dB
PAE
Idss
Gm
Vp
BVgd
BVgs
Rth
Output Power at 1dB Compression
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
Saturated Drain Current
Transconductance
Pinch-off Voltage
f=12GHz
f=18GHz
f=12GHz
f=18GHz
f=12GHz
200
140
26.0
8.0
TYP
28.0
28.0
9.5
7.0
34
340
180
-2.0
-12
-7
-15
-14
40
:
Via Hole
No Via Hole For EFA120B
EFA120BV
MAX
MIN
26.0
10.0
TYP
28.0
28.0
11.5
9.0
36
440
200
140
-3.5
-12
-7
340
180
-2.0
-15
-14
30
o
EFA120B
UNIT
MAX
dBm
dB
%
440
mA
mS
-3.5
V
V
V
C/W
Vds=3V, Vgs=0V
Vds=3V, Vgs=0V
Vds=3V, Ids=3.0mA
Drain Breakdown Voltage Igd=1.2mA
Source Breakdown Voltage Igs=1.2mA
Thermal Resistance (Au-Sn Eutectic Attach)
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
EFA120B
ABSOLUTE
1
EFA120BV
2
CONTINUOUS
8V
-4V
355mA
5mA
@ 3dB
Compression
150
o
C
-65/150
o
C
2.8W
ABSOLUTE
1
12V
-8V
Idss
30mA
26dBm
175
o
C
-65/175
o
C
4.5W
CONTINUOUS
2
8V
-4V
Idss
5mA
@ 3dB
Compression
150
o
C
-65/150
o
C
3.8W
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
12V
-8V
Idss
30mA
26dBm
175
o
C
-65/175
o
C
3.4W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com