EFA120D
UPDATED 09/05/2006
Low Distortion GaAs Power FET
FEATURES
•
•
•
•
•
•
+28.0dBm TYPICAL OUTPUT POWER
19.5dB TYPICAL POWER GAIN AT 2GHz
0.5 X 1200 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION AND PLATED HEAT SINK
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Idss SORTED IN 30mA PER BIN RANGE
Chip Thickness: 75
±
20 microns
All Dimensions In Microns
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
P
1dB
G
1dB
PAE
Idss
Gm
Vp
BVgd
BVgs
Rth
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
f= 2GHz
Vds=8V, Ids=50% Idss
f= 4GHz
Gain at 1dB Compression
f= 2GHz
Vds=8V, Ids=50% Idss
f= 4GHz
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f=2GHz
Saturated Drain Current
Transconductance
Pinch-off Voltage
Drain Breakdown Voltage
Source Breakdown Voltage
Vds=3V, Vgs=0V
Vds=3V, Vgs=0V
Vds=3V,Ids=3.4mA
Igd=1.2mA
Igs=1.2mA
Caution! ESD sensitive device.
MIN
26.0
18.0
TYP
28.0
28.0
19.5
14.5
45
220
140
340
180
-2.0
-13
-7
-15
-14
40
45
o
MAX
UNIT
dBm
dB
%
440
mA
mS
-3.5
V
V
V
C/W
Thermal Resistance (Au-Sn Eutectic Attach)
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
Vds
Vgs
Igsf
Igsr
Pin
Tch
Tstg
Pt
Note:
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reserve Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
12V
-5V
5.4 mA
0.9 mA
25 dBm
175
o
C
-65/175
o
C
3.3 W
CONTINUOUS
2
8V
-4V
1.8 mA
0.3 mA
@ 3dB Compression
175
o
C
-65/175
o
C
3.3 W
1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised September 2006
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
