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EFA060BV 参数 Datasheet PDF下载

EFA060BV图片预览
型号: EFA060BV
PDF下载: 下载PDF文件 查看货源
内容描述: 低失真功率的GaAs FET [Low Distortion GaAs Power FET]
分类和应用:
文件页数/大小: 2 页 / 33 K
品牌: EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
 浏览型号EFA060BV的Datasheet PDF文件第2页  
Excelics
EFA060B/EFA060BV
DATA SHEET
Low Distortion GaAs Power FET
350
+25.0dBm TYPICAL OUTPUT POWER
10.5dB TYPICAL POWER GAIN FOR EFA060B AND
12.0dB FOR EFA060BV AT 12GHz
0.3 X 600 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
EFA060BV WITH VIA HOLE SOURCE GROUNDING
Idss SORTED IN 10mA PER BIN RANGE
50
D
48
350
100
40
G
95
50
Chip Thickness: 75
±
20 microns
All Dimensions In Microns
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN
P
1dB
G
1dB
PAE
Idss
Gm
Vp
BVgd
BVgs
Rth
Output Power at 1dB Compression
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
Saturated Drain Current
Transconductance
Pinch-off Voltage
f=12GHz
f=18GHz
f=12GHz
f=18GHz
f=12GHz
100
70
23.0
9.0
TYP
25.0
25.0
10.5
8.0
35
170
90
-2.0
-12
-7
-15
-14
75
:
Via Hole
No Via Hole For EFA060B
EFA060BV
MAX
MIN
23.0
10.5
TYP
25.0
25.0
12.0
10.0
36
240
100
70
-3.5
-12
-7
170
90
-2.0
-15
-14
55
o
EFA060B
UNIT
MAX
dBm
dB
%
240
mA
mS
-3.5
V
V
V
C/W
Vds=3V, Vgs=0V
Vds=3V, Vgs=0V
Vds=3V, Ids=1.5mA
Drain Breakdown Voltage Igd=1.0mA
Source Breakdown Voltage Igs=1.0mA
Thermal Resistance (Au-Sn Eutectic Attach)
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
EFA060B
ABSOLUTE
1
EFA060BV
2
CONTINUOUS
8V
-4V
190mA
2.5mA
@ 3dB
Compression
150
o
C
-65/150
o
C
1.5W
ABSOLUTE
1
12V
-8V
Idss
15mA
23dBm
175
o
C
-65/175
o
C
2.5W
CONTINUOUS
2
8V
-4V
Idss
2.5mA
@ 3dB
Compression
150
o
C
-65/150
o
C
2.1W
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
12V
-8V
Idss
15mA
23dBm
175
o
C
-65/175
o
C
1.8W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com