Excelics
PRELIMINARY DATA SHEET
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EFA024A
Low Distortion GaAs Power FET
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+18.0dBm TYPICAL OUTPUT POWER
11.0dB TYPICAL POWER GAIN AT 12GHz
TYPICAL 1.6 dB NOISE FIGURE AND 10 dB ASSOCIATED
GAIN AT 12GHz
0.3 X 240 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Idss SORTED IN 5mA PER BIN RANGE
O
G
S
D
S
G
S
D
ELECTRICAL CHARACTERISTICS (T
a
= 25 C)
SYMBOLS
P
1dB
G
1dB
PAE
NF
G
A
Idss
Gm
Vp
BVgd
BVgs
Rth
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
Vds=6V, Ids=50% Idss
Gain at 1dB Compression
Vds=6V, Ids=50% Idss
Vds=6V, Ids=50% Idss
Noise Figure Vds=3V,Ids=15mA
Associated Gain Vds=3V,Ids=15mA
Transconductance
Pinch-off Voltage
f=12GHz
f=18GHz
f=12GHz
f=18GHz
f=12GHz
f=12GHz
f=12GHz
35
30
-8
-6
9
MIN
16
TYP
18
18
11
9
Chip Thickness: 75
±
13 microns
All Dimensions In Microns
MAX
UNIT
dBm
dB
%
30
1.6
10
60
40
-2
-12
-11
135
o
Power Added efficiency at 1dB Compression
dB
dB
85
-3.5
mA
mS
V
V
V
C/W
Saturated Drain Current Vds=3V, Vgs=0V
Vds=3V, Vgs=0V
Vds=3V, Ids=1.0mA
Drain Breakdown Voltage Igd=100uA
Source Breakdown Voltage Igs=100uA
Thermal Resistance (Au-Sn Eutectic Attach)
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Drain-Source Voltage
10V
6V
Vds
Gate-Source Voltage
-8V
-4V
Vgs
Drain Current
Idss
Idss
Ids
Forward Gate Current
6mA
1mA
Igsf
Input Power
19dBm
@ 3dB Compression
Pin
Channel Temperature
175
o
C
150
o
C
Tch
Storage Temperature
-65/175
o
C
-65/150
o
C
Tstg
Total Power Dissipation
1W
830mW
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site:
www.excelics.com
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
